Semiconductor Device and Method for Driving Semiconductor Device

ABSTRACT

By holding a voltage that depends on a video signal in a first capacitor, holding a voltage that depends on a threshold voltage of a transistor in a second capacitor, and then applying a total voltage of the voltage held in the first capacitor and the voltage held in the second capacitor between a source and a gate of the transistor, even when the threshold voltage varies, a current corresponding to the video signal can be supplied to a load. The voltage that depends on the video signal and the voltage that depends on the threshold voltage of the transistor are separately acquired.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to semiconductor devices, display devices,light-emitting devices, methods for manufacturing these devices, andmethods for driving these devices.

Note that a semiconductor device in this specification and the likeindicates all the devices that can operate by utilizing semiconductorcharacteristics; and for example, electro-optical devices, displaydevices, light-emitting devices, semiconductor circuits, and electronicappliances are all included in the category of the semiconductordevices.

In particular, the present invention relates to a display deviceincluding a current-driving-type light-emitting element which changes inluminance depending on current. Further, the present invention relatesto an electronic appliance including the display device.

2. Description of the Related Art

In recent years, flat panel displays such as liquid crystal displays(LCDs) are becoming widespread. Other than LCDs, displays (OELDs)including an organic EL element (also referred to as anelectroluminescent element, an organic light-emitting diode, an OLED, orthe like), which is a current-driving-type light-emitting element thatchanges in luminance depending on current, have been actively researched(Patent Document 1). For example, methods for correcting variations inthe threshold voltage of transistors have been examined (see PatentDocument 1).

REFERENCE Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.    2003-195810

SUMMARY OF THE INVENTION

It is an object of one embodiment of the present invention to provide astructure with which an adverse effect of variations in the thresholdvoltage of transistors can be reduced. Further, it is an object of oneembodiment of the present invention to provide a novel structure withwhich an adverse effect of variations in the mobility of transistors canbe reduced. Furthermore, it is an object of one embodiment of thepresent invention to provide a novel structure with which an adverseeffect of variations in current characteristics of transistors can bereduced. Alternatively, it is an object of one embodiment of the presentinvention to provide a novel structure with which an adverse effect ofdeterioration of a transistor can be reduced. Furthermore, it is anobject of one embodiment of the present invention to provide a novelstructure with which an adverse effect of deterioration of a displayelement can be reduced. Furthermore, it is an object of one embodimentof the present invention to provide a novel structure with which displayunevenness can be reduced. Furthermore, it is an object of oneembodiment of the present invention to provide a novel structure withwhich an image can be displayed with high display quality. Furthermore,it is an object of one embodiment of the present invention to provide anovel structure with which a desired circuit can be achieved with asmall number of transistors. Furthermore, it is an object of oneembodiment of the present invention to provide a novel structure withwhich a desired circuit can be achieved with a small number of wirings.Furthermore, it is an object of one embodiment of the present inventionto provide a novel structure with which a desired circuit can bemanufactured at low cost. Furthermore, it is an object of one embodimentof the present invention to provide a novel structure with which anadverse effect of variations in the threshold voltage of normally-on(depletion) transistors can be reduced. Furthermore, it is an object ofone embodiment of the present invention to provide a novel structurewith which an adverse effect of variations in the mobility ofnormally-on (depletion) transistors can be reduced. Furthermore, it isan object of one embodiment of the present invention to provide a novelstructure with which an adverse effect of variations in currentcharacteristics of normally-on (depletion) transistors can be reduced.Further, it is an object of one embodiment of the present invention toprovide a novel structure with which an adverse effect of deteriorationof a normally-on (depletion) transistor can be reduced.

The description of these objects does not disturb the existence of otherobjects. There is no need to achieve all of these objects with oneembodiment of the present invention. Other objects will be apparent fromand can be derived from the description of the specification, drawings,claims, and the like.

One embodiment of the present invention is a semiconductor device whichincludes: a transistor; a load; a first capacitor; a second capacitor; afirst switch; a second switch; a third switch; a fourth switch; and afifth switch. In the semiconductor device, one of a source and a drainof the transistor is connected to one electrode of the load. The otherof the source and the drain of the transistor is connected to a firstwiring. The other electrode of the load is connected to a second wiring.One electrode of the first switch is connected to a third wiring, andthe other electrode of the first switch is connected to a gate of thetransistor. One electrode of the first capacitor is connected to theother electrode of the first switch, and the other electrode of thefirst capacitor is connected to one electrode of the second switch. Theother electrode of the second switch is connected to a fourth wiring.One electrode of the third switch is connected to the one electrode ofthe second switch, the other electrode of the third switch is connectedto one electrode of the second capacitor, and the other electrode of thesecond capacitor is connected to the one electrode of the load. Oneelectrode of the fourth switch is connected to the gate of thetransistor, the other electrode of the fourth switch is connected to theone electrode of the second capacitor, one electrode of the fifth switchis connected to the one electrode of the load, and the other electrodeof the fifth switch is connected to a fifth wiring.

Another embodiment of the present invention is a method for driving asemiconductor device including a transistor, a load, a first capacitor,and a second capacitor, which includes the steps of: holding a voltagethat depends on a video signal in the first capacitor; holding a voltagethat depends on a threshold voltage of the transistor in the secondcapacitor; applying a total voltage of the voltage held in the firstcapacitor and the voltage held in the second capacitor between a sourceand a gate of the transistor; and supplying a current corresponding tothe total voltage to the load.

Another embodiment of the present invention is a method for driving asemiconductor device including a transistor, a load, a first capacitor,and a second capacitor, which includes the steps of: performing aninitialization operation for acquiring a threshold voltage of thetransistor and an operation of writing a video signal to the firstcapacitor in a first period; performing an operation of writing thethreshold voltage to the second capacitor in a second period after thefirst period; making the first capacitor and the second capacitor in afloating state in a third period after the second period; and supplyinga current to the load by applying a total voltage of a voltage held inthe first capacitor and a voltage held in the second capacitor between asource and a gate of the transistor in a fourth period after the thirdperiod.

The above-mentioned transistor may be either an enhancement transistoror a depletion transistor.

Further, the first switch, the second switch, the third switch, thefourth switch, and the fifth switch may be a first transistor, a secondtransistor, a third transistor, a fourth transistor, and a fifthtransistor, respectively. The above-mentioned transistor and the firstto fifth transistors may have the same conductivity type.

Note that the invention excluding a content that is not specified in thedrawings and texts in this specification can be constructed. When thenumerical range of a value defined by the maximum value and the minimumvalue is described, by appropriately narrowing the range orappropriately excluding a value in the range, the invention excludingpart of the range can be constructed. In this way, the technical scopeof the present invention does not include a conventional technology, forexample.

As a specific example, a case where a circuit including first to fifthtransistors is illustrated in a circuit diagram is considered. In thatcase, the invention in which the circuit does not include a sixthtransistor can be constructed. The invention in which the circuit doesnot include a capacitor can be constructed. The invention in which thecircuit does not include a sixth transistor with a particular connectionstructure can be constructed. The invention in which the circuit doesnot include a capacitor with a particular connection structure can beconstructed. For example, the invention in which a sixth transistorwhose gate is connected to a gate of the third transistor is notincluded can be constructed. Further, the invention in which a capacitorwhose first electrode is connected to the gate of the third transistoris not included can be constructed.

As another specific example, a case in which a description of a value,“a voltage is preferably higher than or equal to 3 V and lower than orequal to 10 V” is provided is considered. In that case, for example, thecase where the voltage is higher than or equal to −2 V and lower than orequal to 1 V can be excluded from the invention. Further, the case wherethe voltage is higher than or equal to 13 V can be excluded from theinvention. Note that, for example, the voltage may be higher than orequal to 5 V and lower than or equal to 8 V in the invention. Note that,for example, the voltage may be approximately 9 V in the invention. Notethat, for example, the voltage may be higher than or equal to 3 V andlower than or equal to 10 V and may exclude 9 V in the invention.

As another specific example, a case in which a description “a voltage ispreferably 10 V” is provided is considered. In that case, for example,the case where the voltage is higher than or equal to −2 V and lowerthan or equal to 1 V can be excluded from the invention. Further, thecase where the voltage is higher than or equal to 13 V can be excludedfrom the invention.

As still another specific example, a case in which a description “a filmis an insulating film” is provided is considered. In that case, forexample, the case where the insulating film is an organic insulatingfilm can be excluded from the invention. Further, the case where theinsulating film is an inorganic insulating film can be excluded from theinvention.

As another specific example, a case in which a description of a stackedstructure, “a film is provided between A and B” is provided isconsidered. In that case, for example, the case where the film is astacked film of four or more layers can be excluded from the invention.Further, for example, the case where a conductive film is providedbetween A and the film can be excluded from the invention.

In one embodiment of the present invention, an adverse effect ofvariations in the threshold voltage of transistors can be reduced.Further in one embodiment of the present invention, an adverse effect ofvariations in the mobility of transistors can be reduced. Further in oneembodiment of the present invention, an adverse effect of deteriorationof a transistor can be reduced. Further in one embodiment of the presentinvention, an adverse effect of deterioration of a display element canbe reduced. Further in one embodiment of the present invention, displayunevenness can be reduced. Further in one embodiment of the presentinvention, an image can be displayed with high display quality. Furtherin one embodiment of the present invention, a desired circuit can beachieved with a small number of transistors. Further in one embodimentof the present invention, a desired circuit can be achieved with a smallnumber of wirings. Further in one embodiment of the present invention,manufacture through a small number of steps can be achieved.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 is a circuit diagram illustrating one embodiment of the presentinvention;

FIGS. 2A to 2C are flow charts showing one embodiment of the presentinvention;

FIG. 3 is a timing chart showing one embodiment of the presentinvention;

FIGS. 4A and 4B are circuit diagrams showing one embodiment of thepresent invention;

FIGS. 5A and 5B are circuit diagrams showing one embodiment of thepresent invention;

FIG. 6 is a circuit diagram showing one embodiment of the presentinvention;

FIGS. 7A to 7D are circuit diagrams showing one embodiment of thepresent invention;

FIG. 8 is a circuit diagram showing one embodiment of the presentinvention;

FIG. 9 is a circuit diagram showing one embodiment of the presentinvention;

FIG. 10 is a circuit diagram showing one embodiment of the presentinvention;

FIG. 11 is a circuit diagram showing one embodiment of the presentinvention;

FIG. 12 is a circuit diagram showing one embodiment of the presentinvention;

FIG. 13 is a circuit diagram showing one embodiment of the presentinvention;

FIG. 14 is a circuit diagram showing one embodiment of the presentinvention;

FIG. 15 is a circuit diagram showing one embodiment of the presentinvention;

FIG. 16 is a circuit diagram showing one embodiment of the presentinvention;

FIGS. 17A and 17B are circuit diagrams showing one embodiment of thepresent invention;

FIG. 18 illustrates a pixel circuit in one embodiment of the presentinvention;

FIG. 19 illustrates a structural example of a display device;

FIG. 20 is a circuit diagram showing one embodiment of the presentinvention;

FIG. 21 illustrates one embodiment of the present invention;

FIG. 22 illustrates one embodiment of the present invention;

FIG. 23 is a circuit diagram showing one embodiment of the presentinvention;

FIG. 24 illustrates one embodiment of the present invention;

FIG. 25 is a top view illustrating one embodiment of the presentinvention;

FIGS. 26A and 26B are cross-sectional views illustrating one embodimentof the present invention;

FIG. 27 is a top view illustrating one embodiment of the presentinvention;

FIG. 28 is a top view illustrating one embodiment of the presentinvention;

FIG. 29 is a top view illustrating one embodiment of the presentinvention;

FIG. 30 is a top view illustrating one embodiment of the presentinvention;

FIG. 31 is a top view illustrating one embodiment of the presentinvention;

FIG. 32 is a top view illustrating one embodiment of the presentinvention;

FIGS. 33A and 33B are cross-sectional views illustrating one embodimentof the present invention;

FIG. 34 is a top view illustrating one embodiment of the presentinvention;

FIG. 35 is a circuit diagram showing one embodiment of the presentinvention;

FIGS. 36A to 36E each illustrate a crystal structure of an oxidematerial;

FIGS. 37A to 37C illustrate a crystal structure of an oxide material;

FIGS. 38A to 38C illustrate a crystal structure of an oxide material;

FIGS. 39A and 39B each illustrate a crystal structure of an oxidematerial;

FIGS. 40A and 40B illustrate structural examples of a semiconductordevice;

FIGS. 41A and 41B are a top view and a cross-sectional view,respectively, illustrating one embodiment of the present invention;

FIG. 42 illustrates one embodiment of the present invention;

FIGS. 43A to 43H illustrate electronic appliances;

FIGS. 44A to 44H illustrate electronic appliances;

FIG. 45 illustrates a pixel circuit of one embodiment of the presentinvention;

FIG. 46 illustrates a pixel circuit of one embodiment of the presentinvention;

FIG. 47 illustrates a pixel circuit of one embodiment of the presentinvention;

FIG. 48 illustrates a pixel circuit of one embodiment of the presentinvention;

FIG. 49 illustrates a pixel circuit of one embodiment of the presentinvention;

FIG. 50 illustrates a pixel circuit of one embodiment of the presentinvention;

FIG. 51 illustrates a pixel circuit of one embodiment of the presentinvention;

FIG. 52 illustrates a pixel circuit of one embodiment of the presentinvention; and

FIG. 53 illustrates a pixel circuit of one embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. Note that thepresent invention is not limited to the description below, and it iseasily understood by those skilled in the art that a variety of changesand modifications can be made without departing from the spirit andscope of the present invention. Accordingly, the present inventionshould not be construed as being limited to the description of theembodiments below. In structures given below, the same portions orportions having similar functions are denoted by the same referencenumerals in different drawings, and explanation thereof will not berepeated.

Note that what is described (or part thereof) in one embodiment can beapplied to, combined with, or exchanged with another content in the sameembodiment and/or what is described (or part thereof) in anotherembodiment or other embodiments.

Note that a structure illustrated in a drawing (or part thereof) in oneembodiment can be combined with a structure of another part illustratedin the drawing, a structure illustrated in another drawing (or partthereof) in the embodiment, and/or a structure illustrated in a drawing(or part thereof) in another or other embodiments.

Note that size, thickness, or regions in the drawings are exaggeratedfor clarity in some cases. Thus, one aspect of an embodiment of thepresent invention is not limited to such scales. Further, the drawingsare schematic views of ideal examples. Thus, one aspect of an embodimentof the present invention is not limited to shapes and the likeillustrated in the drawings. For example, variations in shape due to amanufacturing technique or dimensional deviation can be included.

Note that an explicit description “X and Y are connected” can mean thatX and Y are electrically connected, that X and Y are functionallyconnected, and that X and Y are directly connected. Here, each of X andY denotes an object (e.g., a device, an element, a circuit, a wiring, anelectrode, a terminal, a conductive film, or a layer). Accordingly, aconnection relation other than connection relations illustrated indrawings and texts is also included, without limitation to apredetermined connection relation, for example, the connection relationsillustrated in the drawings and the texts.

For example, in the case where X and Y are electrically connected, oneor more elements which enable electrical connection between X and Y(e.g., a switch, a transistor, a capacitor, an inductor, a resistor, adiode, a display element, a light-emitting element, and/or a load) canbe connected between X and Y. Note that a switch is controlled to beturned on or off. That is, the switch has a function of determiningwhether to supply a current by being turned on or off (being broughtinto an on state or an off state).

For example, in the case where X and Y are functionally connected, oneor more circuits which enable functional connection between X and Y(e.g., a logic circuit such as an inverter, a NAND circuit, or a NORcircuit; a signal converter circuit such as a DA converter circuit, anAD converter circuit, or a gamma correction circuit; a potential levelconverter circuit such as a power supply circuit (e.g., a step-upcircuit or a step-down circuit) or a level shifter circuit for changingthe potential level of a signal; a voltage source; a current source; aswitching circuit; an amplifier circuit such as a circuit that canincrease signal amplitude, the amount of current, or the like, anoperational amplifier, a differential amplifier circuit, a sourcefollower circuit, or a buffer circuit; a signal generation circuit; amemory circuit; and/or a control circuit) can be connected between X andY. Note that, for example, in the case where a signal output from X istransmitted to Y even when another circuit is interposed between X andY, X and Y are functionally connected.

Note that an explicit description “X and Y are connected” can mean thatX and Y are electrically connected, that X and Y are functionallyconnected, and that X and Y are directly connected. That is, when it isexplicitly described that “X and Y are electrically connected”, thedescription can have the same meaning as the explicit description “X andY are connected.”

Note that, even when independent components are electrically connectedto each other in a circuit diagram, there is a case where one conductivelayer has functions of a plurality of components (e.g., a wiring and anelectrode), such as a case where part of a wiring also functions as anelectrode. The “electrical connection” in this specification can alsomean that one conductive layer has functions of a plurality ofcomponents.

Note that it might be possible for those skilled in the art to constructone embodiment of the invention even when all the portions to whichterminals of an active element (e.g., a transistor or a diode), apassive element (e.g., a capacitor or a resistor), or the like areconnected are not specified. In particular, in the case where the numberof portions to which a terminal is connected might be plural, it is notnecessary to specify the portions to which the terminal is connected.Therefore, it might be possible to constitute one embodiment of theinvention by specifying only portions to which some of terminals of anactive element (e.g., a transistor or a diode), a passive element (e.g.,a capacitor or a resistor), or the like are connected.

Note that it might be possible for those skilled in the art to identifythe invention when at least connection in a circuit is specified.Further, it might be possible for those skilled in the art to identifythe invention when at least a function of a circuit is specified.Therefore, when connection in a circuit is specified, the circuit isdisclosed as one embodiment of the invention even when a function is notspecified, and one embodiment of the invention can be constituted.Alternatively, when a function of a circuit is specified, the circuit isdisclosed as one embodiment of the invention even when the connection isnot specified, and one embodiment of the invention can be constituted.

Note that a transistor is an element having at least three terminals: agate, a drain, and a source. In addition, the transistor has a channelregion between the drain (drain terminal, drain region, or drainelectrode) and the source (source terminal, source region, or sourceelectrode), and a current can flow through the drain, the channelregion, and the source. Here, since the source and the drain may changedepending on the structure, the operating condition, and the like of thetransistor, it is difficult to define which is a source or a drain.Therefore, in this document (the specification, claims, drawings, thelike), a region functioning as a source or a drain is not called thesource or the drain in some cases. In that case, for example, one of thesource and the drain may be referred to as a first terminal and theother thereof may be referred to as a second terminal. Alternatively,one of the source and the drain may be referred to as a first electrodeand the other thereof may be referred to as a second electrode.Alternatively, one of the source and the drain may be referred to as afirst region and the other thereof may be referred to as a secondregion. Alternatively, one of the source and the drain may be referredto as a source region and the other thereof may be referred to as adrain region.

Note that a pixel in this specification corresponds to a display unitcontrolling the luminance of one color element (e.g., any one of R(red), G (green), and B (blue)). Therefore, in a color display device,the minimum display unit of a color image is composed of three pixels ofan R pixel, a G pixel and a B pixel. Note that the color elements fordisplaying a color image are not limited to three colors, and colorelements of more than three colors may be used or a color other than RGBmay be used.

Note that terms such as “first”, “second”, and “third” are used fordistinguishing various elements, members, regions, layers, and areasfrom others. Therefore, the terms such as “first”, “second”, and “third”do not limit the number of elements, members, regions, layers, areas,and the like. Further, for example, “first” can be replaced with“second”, “third”, or the like.

Note that a switch is an element having a switching function of bringingterminals into a conduction state (ON) or a non-conduction state (OFF)and a function of determining whether to flow a current. For example, anelectrical switch or a mechanical switch can be used as the switch. Forexample, the switch may be formed using a transistor, a diode, or aswitch formed by a micro electro mechanical system (MEMS) technology,such as a digital micromirror device (DMD). Alternatively, the switchmay be a logic circuit in which transistors are combined. In the case ofemploying a transistor as the switch, there is no particular limitationon the polarity (conductivity type) of the transistor. Note that atransistor with small off-state current is preferably used and thepolarity of the transistor is preferably selected in accordance with aninput potential.

Examples of the transistor with small off-state current are a transistorprovided with an LDD region, a transistor with a multi-gate structure,and a transistor in which an oxide semiconductor is used for asemiconductor layer. In the case where a combination of transistorsoperates as a switch, a complementary switch may be employed by usingboth an n-channel transistor and a p-channel transistor. A complementaryswitch achieves appropriate operation even when a potential input to theswitch is changed relative to an output potential.

Note that, when a transistor is used as a switch, the switch includes aninput terminal (one of a source and a drain), an output terminal (theother of the source and the drain), and a terminal for controllingconduction (gate) in some cases. On the other hand, when a diode is usedas a switch, the switch does not have a terminal for controllingconduction in some cases. Therefore, the number of wirings forcontrolling terminals can be reduced in the case of using a diode as aswitch as compared to the case of using a transistor as a switch.

Note that, for example, a transistor with a structure where gateelectrodes are provided above and below a channel can be used as atransistor. With the structure where the gate electrodes are providedabove and below the channel, a circuit structure where a plurality oftransistors is connected in parallel is provided. Thus, a channel regionis increased, so that the amount of current can be increased. Byemploying the structure where the gate electrodes are provided above andbelow the channel, a depletion layer is easily formed; thus,subthreshold swing (S value) can be improved.

Note that, for example, a transistor with a structure where a sourceelectrode or a drain electrode overlaps with a channel region (or partthereof) can be used as a transistor. By employing the structure wherethe source electrode or the drain electrode overlaps with the channelregion (or part thereof), unstable operation due to electric chargeaccumulated in part of the channel region can be prevented.

In this specification, a term “parallel” indicates that the angle formedbetween two straight lines is greater than or equal to −10° and lessthan or equal to 10°, and accordingly also includes the case where theangle is greater than or equal to −5° and less than or equal to 5°. Inaddition, a term “perpendicular” indicates that the angle formed betweentwo straight lines is greater than or equal to 80° and less than orequal to 100°, and accordingly includes the case where the angle isgreater than or equal to 85° and less than or equal to 95°.

In this specification, the trigonal and rhombohedral crystal systems areincluded in the hexagonal crystal system.

Embodiment 1

A circuit described in one embodiment of the present invention can beused as a pixel circuit including a light-emitting element, for example.Note that the circuit can be used for not only a pixel circuit but alsoa circuit functioning as a current source for supplying a current to aload. Further, one aspect of an embodiment of the present invention canalso be used as an analog circuit or part of a video signal line drivercircuit (source driver), for example.

Note that a current source has a function of supplying a constantcurrent even under conditions where the voltage applied to a load(circuit) connected to the current source changes. As a power sourceother than the current source, a voltage source can be given. Thevoltage source has a function of supplying a constant voltage even underconditions where the current flowing through a load (circuit) connectedto the voltage source changes. Thus, the current source and the voltagesource both have a function of supplying a voltage and a current, butare different from each other in which is supplied from the powersource: constant voltage or constant current.

Note that in this specification, a load, for example, refers to variousobjects such as an object having a rectifying property, an object havingcapacitance, an object having resistance, a circuit including a switch,and a pixel circuit, and is not limited to a particular object. Forexample, an object having a rectifying property has current-voltagecharacteristics showing different resistance values depending on thedirection of an applied bias, and has electric characteristics whichallow most current to flow only in one direction. In the circuitconfiguration illustrated in FIG. 1, for example, a load 150 is providedso that current flows from a transistor 101 to a wiring 132.

Since there is a possibility that the load and a circuit including acurrent source are made by different manufacturers, the circuitincluding a current source is not necessarily connected to the load.

Other examples of the load 150 are a display element (e.g., a liquidcrystal element), a light-emitting element (e.g., an EL element, aninorganic LED element, an LED chip), and part of a display element or alight-emitting element (e.g., a pixel electrode, an anode electrode, acathode electrode). In this embodiment, an example of the case of usinga light-emitting element (an EL element or the like) as a load in apixel circuit of a display device, which is one embodiment of asemiconductor device, will be described.

First, an example of a pixel circuit of the present invention will bedescribed with reference to FIG. 1. A pixel circuit 100 illustrated inFIG. 1 includes a transistor 101, a load 150, a switch 111, a switch112, a switch 113, a switch 114, a switch 115, a capacitor 121, and acapacitor 122.

The capacitors can be omitted when gate capacitance (parasiticcapacitance) of the transistor is utilized. Therefore, the pixel circuit100 can have a structure without the capacitors.

The pixel circuit 100 illustrated in FIG. 1 has a circuit fordischarging electric charge held in a gate of the transistor in order tocorrect variations in current characteristics such as the thresholdvoltage of the transistor. In practice, the pixel circuit 100 has such aconnection relation that variations in current characteristics of thetransistor can be corrected by controlling the switching of a pluralityof switches provided between wirings.

Further, the pixel circuit 100 has a function of a current sourcecircuit that can supply a current to the load 150.

One electrode (terminal) of the switch 111 is connected to a wiring 133,and the other electrode (terminal) of the switch 111 is connected to oneelectrode (terminal) of the capacitor 121. A node where the otherelectrode of the switch 111 and one electrode of the capacitor 121 areconnected to each other is a node 141. The other electrode of thecapacitor 121 is connected to one electrode of the switch 112. A nodewhere the other electrode of the capacitor 121 and one electrode of theswitch 112 are connected to each other is a node 142. The otherelectrode of the switch 112 is connected to a wiring 134. One electrodeof the switch 114 is connected to the node 141, and the other electrodeof the switch 114 is connected to one electrode of the capacitor 122. Anode where the other electrode of the switch 114 and one electrode ofthe capacitor 122 are connected to each other is a node 143. The otherelectrode of the capacitor 122 is connected to one electrode of theswitch 115, and the other electrode of the switch 115 is connected to awiring 135. A node where the other electrode of the capacitor 122 andone electrode of the switch 115 are connected to each other is a node144. One electrode of the switch 113 is connected to the node 142, andthe other electrode of the switch 113 is connected to the node 143. One(also referred to as a first electrode (terminal)) of a source and adrain of the transistor 101 is connected to the node 144, the other(also referred to as a second electrode (terminal)) of the source andthe drain of the transistor 101 is connected to a wiring 131, and a gateof the transistor 101 is connected to the node 141. One electrode of theload 150 is connected to the node 144, and the other electrode of theload 150 is connected to the wiring 132. A node to which the secondelectrode of the transistor 101 is connected is a node 145. In FIG. 1,the second electrode of the transistor 101 and the wiring 131 areconnected to each other via the node 145.

The pixel circuit 100 illustrated in FIG. 1 is connected to the wiring131, the wiring 132, the wiring 133, the wiring 134, and the wiring 135.In FIG. 1, the wiring 131, the wiring 132, the wiring 133, the wiring134, and the wiring 135 connected to the pixel circuit 100 are providedoutside the pixel circuit 100. In an actual case, however, the wiringsare electrically connected to the pixel circuit 100; therefore, in thefollowing description, the pixel circuit 100 may be regarded asincluding the wirings.

For example, the wiring 131 is connected to a circuit 181 that suppliesat least a high potential side power supply potential VDD (hereinaftersimply referred to as VDD). Note that depending on the conductivity typeof the transistor 101 or the current characteristics of the load 150,the circuit 181 supplies a low potential side power supply potential VSS(hereinafter simply referred to as VSS). Examples of the circuit 181include a power supply circuit and an amplifier circuit. Accordingly,the wiring 131 has a function of transmitting or supplying the potentialVDD. Alternatively, the wiring 131 has a function of supplying a currentto the transistor 101. Alternatively, the wiring 131 functions as apower supply line. Alternatively, the wiring 131 has a function ofsupplying a current to the load 150. Alternatively, for example, thereis a case in which a potential for making the load 150 in a reverse biasstate or a potential for controlling the potential of the node 144 issupplied to the wiring 131. Note that it is preferable that a constantpotential be supplied to the wiring 131. However, the potential suppliedto the wiring 131 is not limited to a constant potential in one aspectof an embodiment of the present invention, and a non-constant potentialsuch as a pulse signal may be supplied. Examples of the circuit 181 insuch a case include a digital circuit, a shift register circuit, and ascan line driver circuit.

For example, the wiring 133 is connected to at least a circuit 183having a function of supplying a video signal Vsig (hereinafter simplyreferred to as Vsig). An example of the circuit 183 is a source driver(a signal line driver circuit). Accordingly, the wiring 133 has afunction of transmitting or supplying Vsig. Further, in some cases, aprecharge signal, an initialization signal, a signal for making the load150 in a reverse bias state, or the like may be supplied to the wiring133.

For example, Vsig has a potential that varies in accordance with theamount of current that is to be supplied to the load 150. For example,if the current supplied to the load 150 is constant, Vsig is aconstant-potential signal, and if not, Vsig is a signal with a potentialwhich changes over time in accordance with the amount of current whichis to be supplied to the load 150. Using this signal, images can bedisplayed.

For example, the wiring 134 is connected to at least a circuit 184 thatsupplies a potential V1 (hereinafter simply referred to as V1). Examplesof the circuit 184 include a power supply circuit and an amplifiercircuit. Accordingly, the wiring 134 has a function of transmitting orsupplying V1. Alternatively, the wiring 134 has a function of supplyingelectric charge to the capacitor 121. Alternatively, the wiring 134 hasa function of fixing the potential of the node 142 at V1. Note that itis preferable that a constant potential be supplied to the wiring 134.However, the potential supplied to the wiring 134 is not limited to aconstant potential in one aspect of an embodiment of the presentinvention, and a non-constant potential such as a pulse signal may besupplied. Examples of the circuit 184 in such a case include a digitalcircuit, a shift register circuit, and a scan line driver circuit.

For example, the wiring 135 is connected to at least a circuit 185 thatsupplies a potential V2 (hereinafter simply referred to as V2). Examplesof the circuit 185 include a power supply circuit and an amplifiercircuit. Accordingly, the wiring 135 has a function of transmitting orsupplying V2. Alternatively, the wiring 135 has a function of supplyingelectric charge to the capacitor 122. Alternatively, the wiring 135 hasa function of fixing the potential of the node 144 at V2. Alternatively,the wiring 135 has a function of fixing the potential of the source ofthe transistor 101 at V1. Alternatively, the wiring 135 has a functionof capable of initializing the transistor 101. Note that it ispreferable that a constant potential be supplied to the wiring 135.However, the potential supplied to the wiring 135 is not limited to aconstant potential in one aspect of an embodiment of the presentinvention, and a non-constant potential such as a pulse signal may besupplied. Examples of the circuit 185 in such a case include a digitalcircuit, a shift register circuit, and a scan line driver circuit.

For example, the wiring 132 is connected to at least a circuit 182 thatsupplies a potential V3 (hereinafter simply referred to as V3). Examplesof the circuit 182 include a power supply circuit and an amplifiercircuit. Accordingly, the wiring 132 has a function of transmitting orsupplying V3. Alternatively, the wiring 132 has a function of supplyingelectric charge to the load 150. Alternatively, the wiring 132 has afunction of fixing the potential of a cathode of the load 150 at V3.Note that it is preferable that a constant potential be supplied to thewiring 132. However, the potential supplied to the wiring 132 is notlimited to a constant potential in one aspect of an embodiment of thepresent invention, and a non-constant potential such as a pulse signalmay be supplied. Examples of the circuit 182 in such a case include adigital circuit, a shift register circuit, and a scan line drivercircuit.

The capacitor 121 and the capacitor 122 may have a structure where aninsulating film is sandwiched between wirings, semiconductor layers,electrodes, or the like, for example. The capacitor 121 has a functionof holding a voltage that depends on Vsig, for example. The capacitor122 has a function of holding a voltage that depends on characteristics(e.g., a voltage that depends on the threshold voltage, a voltage thatdepends on the mobility) of the transistor 101, for example.Alternatively, the capacitor 122 has a function of holding a voltagecorresponding to the amount of current supplied to the load 150.

Next, as an example, an operation of the pixel circuit 100 in the caseof using a light-emitting element typified by an electroluminescentelement (EL element) as the load 150 will be described with reference toFIGS. 2A to 2C, FIG. 3, FIGS. 4A and 4B, FIGS. 5A and 5B, FIG. 6, FIGS.7A to 7D, and FIG. 8. This operation can be similarly performed in thecases where the load 150 is an element other than the EL element.

FIGS. 2A to 2C are each a flow chart showing operations from a period201 to a period 205. FIG. 2A is a flow chart in the case of performingan initialization operation and a Vsig acquisition operation in theperiod 201, and FIG. 2B is a flow chart in the case of performing a Vthacquisition operation and a Vsig acquisition operation in the period202. The period 203 may be omitted as appropriate. The Vsig acquisitionoperation may be performed in the period 203. Further, the period 204and the period 205 may be performed in the same period. The Vthacquisition operation and the Vsig acquisition operation may beperformed in separate periods or in the same period.

FIG. 2C is a flow chart in the case of performing a Vsig acquisitionoperation after a Vth acquisition operation is performed. As shown inFIG. 2C, after a Vth acquisition operation is performed in the period202, a Vsig acquisition operation may be performed in a period 2021.Note that after a Vsig acquisition operation is performed in the period202, a Vth acquisition operation may be performed in the period 2021.Since the Vth acquisition operation and the Vsig acquisition operationare not performed in the same period, one more operation period isnecessary compared with the flows in FIGS. 2A and 2B. However, thesemiconductor device can operate more precisely.

As shown in FIGS. 2A to 2C, the periods 201 to 205 are provided inseparate periods. This makes it easy for each of the operations to beperformed precisely. In particular, long operation periods can beensured as the period 201, the period 202, the period 2021, the period204, and/or the period 205, whereby the semiconductor device can operatemore precisely.

Note that in the flow charts in FIGS. 2A to 2C, another operation can beadditionally performed between steps or at the same time as a step.

It is preferable that the next step start after a previous step iscompletely finished. However, without limitation thereto, in one aspectof an embodiment of the present invention, the next step can startbefore a previous step is completely finished.

Further, although the periods 201 to 205 are provided in separateperiods in FIGS. 2A to 2C, the provision of the periods 201 to 205 isnot limited to that in this example in one aspect of an embodiment ofthe present invention.

FIG. 3 shows an example of a timing chart showing an operation of thepixel circuit 100 corresponding to the flow chart of FIG. 2A. Here, asan example, a case in which the potential of the wiring 131 is higherthan that of the wiring 132 is described. That is, the source of thetransistor 101 is the terminal connected to the node 144. In FIG. 3, oneframe period includes the period 201 in which an initializationoperation and a Vsig acquisition operation are performed, the period 202in which an operation of acquiring a threshold voltage Vth of thetransistor 101 (hereinafter simply referred to as Vth) is performed, theperiod 203 in which an operation of holding Vth and Vsig is performed,the period 204 in which Vth is added to Vsig, and the period 205 inwhich an image display operation is performed. However, withoutlimitation to this, in one aspect of an embodiment of the presentinvention, for example, part of the periods (e.g., the period 203) canbe omitted, or another period can be further added.

One frame period corresponds to a period for displaying an image for onescreen, and the periods 201 to 203 or the periods 201 to 204 can becollectively referred to as an address period.

FIGS. 4A and 4B, FIGS. 5A and 5B, FIG. 6, FIGS. 7A to 7D, and FIG. 8 arecircuit diagrams showing an example of the operation of the pixelcircuit 100 in each operation period. FIGS. 7A to 7D and FIG. 8 arecircuit diagrams which simply show the operation of the pixel circuit100 by omitting the switches 111 to 115 illustrated in FIGS. 4A and 4B,FIGS. 5A and 5B, and FIG. 6. In this embodiment, as an example, theelectrode connected to the node 144 of the electrodes included in theload 150 serves as an anode, and the electrode connected to the wiring132 serves as a cathode. The load 150 emits light when the differencebetween the potential of the anode and the potential of the cathode inthe load 150 exceeds V_(EL) (the threshold voltage of the load 150). Asan example in this embodiment, an n-channel transistor is used as thetransistor 101. Accordingly, when the difference Vgs (hereinafter simplyreferred to as Vgs) between the potential of the gate electrode and thepotential of the source electrode in the transistor 101 exceeds Vth, thesource electrode and the drain electrode are electrically connected toeach other (on state).

Here, Vsig is a signal which corresponds to the video signal fordisplaying a grayscale image in the pixel, and is in this embodiment apotential corresponding to a luminance data. Note that Vsig with whichthe maximum luminance is obtained is VsigH, and Vsig with which theminimum luminance is obtained is VsigL. That is, the potential of Vsigchanges between VsigL and VsigH. Further, Vsig may be an analog signalhaving a potential that continuously changes or a digital signal havinga potential that changes between discrete values.

It is preferable that V1 be a fixed potential during at least the period201 and the period 202. For example, V1 can be set at a potential equalto that of VsigL. Note that in this specification, the term “equal”includes an error of 20% or less, preferably 10% or less, furtherpreferably 5% or less. By adjusting the potential V1, Vgs of thetransistor 101 can be changed.

It is preferable that V2 and V3 be each a fixed potential during atleast the period 201. Further, V2 and V3 are preferably lower than VDD.In the case of using an n-channel transistor as the transistor 101, itis preferable that V2 and V3 be potentials lower than (VDD−Vth). Forexample, V2 and V3 may be a GND potential or a VSS potential. However,in one aspect of an embodiment of the present invention, V2 and V3 arenot limited to the potentials described above.

Further, V3 is preferably set so as to satisfy V3≧Vsig−Vth−V_(EL),according to Formula 3. However, V3 is not limited to this value in oneaspect of an embodiment of the present invention. In addition, V3 ispreferably determined in consideration of variations (fluctuations) inVth and V_(EL). Further, the potentials V1, V2, and V3 may be varied asnecessary.

The following description in this embodiment is given on the assumption,as an example, that Vth is 2 V, V_(EL) is 1 V, VsigH is 5 V, VsigL is 0V, V1 is 0 V, V2 is −3 V, and V3 is 2V.

First, in the period 201, an initialization operation and a Vsigacquisition operation of the pixel circuit 100 are performed (see FIG.4A and FIG. 7A). The initialization operation is an operation ofaccumulating electric charge necessary for turning on the transistor 101in the capacitor 122 and turning on the transistor 101. Further, theinitialization operation is also an operation of setting the potentialof the node 144 so that the terminal on the node 144 side of thetransistor 101 serves as a source. In the period 201, it is preferableto stop supply of electric charge to the load 150. In this embodiment,it is preferable to stop light emission from the load 150 in the period201.

In the period 201, the switch 111, the switch 112, the switch 114, andthe switch 115 are in an on state, and the switch 113 is in an offstate. Under this condition, the potential of the node 141 is Vsig, andthe potential of the node 142 is V1. The potential of the node 143 isVsig, and the potential of the node 144 is V2. Since the transistor 101is an n-channel transistor in this embodiment, by setting V2 at apotential lower than VDD, the terminal on the node 144 side of thetransistor 101 serves as a source and the terminal on the wiring 131side serves as a drain.

Further, V2 is preferably set so as to satisfy Formula 1. When V2 is setso as to satisfy Formula 1, the difference between the potential of thenode 144 and the potential of the wiring 132 can become lower than orequal to V_(EL), or a state in which a reverse bias is applied to theload 150 can be made. Accordingly, an increase in power consumptioncaused by unnecessary flow of current to the load 150 can be prevented.Since a light-emitting element is used as an example of the load 150 inthis embodiment, unnecessary light emission from the load 150 can beprevented. Alternatively, the reverse bias state can reducedeterioration of the load 150 and improve the characteristics of thedeteriorated load 150.

V2≦V _(EL) +V3  [FORMULA 1]

In order to assure Vth acquisition, which is performed later, Vsig ispreferably set so as to satisfy Formula 2.

Vsig>Vth+V2  [FORMULA 2]

In the case of FIG. 2A, a Vsig acquisition operation is also performedin the period 201. The Vsig acquisition operation is an operation ofwriting a voltage that depends on Vsig in the capacitor 121. By makingthe switch 113 in an off state and the switches 111 and 112 in an onstate, a voltage difference between Vsig and V1 is supplied to thecapacitor 121. Since V1 is 0 V in this embodiment, a voltage of Vsig isinput to the capacitor 121.

Vsig is a potential corresponding to luminance data and ranges fromVsigH to VsigL. In this embodiment, potentials of from 5 V to 0 Vcorresponding to the luminance data are supplied as Vsig to the node 141and the node 143. In addition, it is assumed that V1, V2, and V3 are 0V, −3 V, and 2V respectively and that 0 V, −3 V, and 2V are supplied tothe node 142, the node 144, and the cathode of the load 150 connected tothe wiring 132, respectively. Note that it is preferable to determine V2and Vsig in consideration of variations (fluctuations) in Vth andV_(EL).

Note that in the case of not performing the Vsig acquisition operation,the switch 112 and the switch 113 may be in an off state. In such acase, the node 142 is in a floating state. Alternatively, in such acase, the switch 112 may be in an off state and the switch 113 may be inan on state.

As shown in FIG. 2B, the Vsig acquisition operation may be performed inthe period 202. In the case of performing the Vsig acquisition operationin the period 202, if the switch 112 is in an off state in the period201, the switch 113 may be in an on state in the period 201 so thatelectric charge is not accumulated in the capacitor 121. That is, avideo signal may or may not be written to the capacitor 121 in theperiod 201. In other words, instead of completely supplying a videosignal to the capacitor 121 in the period 201, the video signal maystart being supplied to the capacitor 121 in the period 201 and finishwriting the signal in the period 202. That is, the Vsig acquisitionoperation may be performed through the period 201 and the period 202.

Next, in the period 202, an operation of acquiring Vth of the transistor101 is performed (see FIG. 4B and FIG. 7B). The Vth acquisitionoperation is an operation of writing a voltage that depends on Vth tothe capacitor 122. Note that the voltage written to the capacitor 122 isnot necessarily completely equal to Vth of the transistor 101.

First, after the period 201 is finished, the switch 115 is turned off.By turning off the switch 115, the node 144 is brought into a floatingstate. However, since the transistor 101 is in on state in the period201, a current flows from the wiring 131 to the node 144 through thetransistor 101.

By the flow of a current to the node 144 through the transistor 101under the condition where the node 144 is in a floating state, thepotential of the node 144 is increased in accordance with the amount ofthe current flow. When the difference (Vgs) between the potential of thenode 143 and the potential of the node 144 reaches Vth, the transistor101 is turned off and the increase in the potential of the node 144stops. Alternatively, when Vgs becomes close to Vth, the current flowingthrough the transistor 101 becomes small, leading to a gradual increasein the potential of the node 144. Thus, the potential of the node 144increases to (Vsig−Vth) or a potential close thereto. At this time, Vgsis accumulated in the capacitor 122. That is, a potential that issubstantially equal to Vth of the transistor 101 is written to thecapacitor 122.

Note that in some cases, it takes a very long time until Vgs reaches thethreshold voltage Vth of the transistor 101. Accordingly, in many cases,the operation of the pixel circuit 100 is performed without Vgs beingcompletely decreased to the threshold voltage Vth. That is, since thetransistor 101 is an n-channel transistor in this embodiment, the period202 is finished in many cases when Vgs becomes a value that is slightlyhigher than the threshold voltage Vth. In the case of using a p-channeltransistor as the transistor 101, the period 202 is finished in manycases when Vgs becomes a value that is slightly lower than the thresholdvoltage Vth. Therefore, the potential difference Vgs at the time whenthe period 202 is finished can be expressed as a voltage that depends onVth of the transistor 101.

The potential of the node 144 is increased until the transistor 101 isturned off. Accordingly, the potential of the node 144 can become higherthan the potential of the node 141. Thus, the threshold voltage Vth ofthe transistor 101 can be acquired in both cases in which the thresholdvoltage of the transistor 101 is a positive value (a normally-off orenhancement transistor) and in which the threshold voltage of thetransistor 101 is a negative value (a normally-on or depletiontransistor). Further, even in the case where the transistor 101 changesfrom a normally-off type to a normally-on type due to deterioration ofthe transistor, the threshold voltage of the transistor 101 can beacquired.

The time until Vgs reaches the threshold voltage Vth of the transistor101 (the time until the transistor 101 is turned off through theincrease in the potential of the node 144) varies depending on themobility of the transistor 101. That is, the time until Vgs reaches thethreshold voltage Vth is shorter in the transistor 101 having a highermobility than in the transistor 101 having a lower mobility; in otherwords, the transistor 101 having a lower mobility needs longer time thanthe transistor 101 having a higher mobility. Accordingly, by dischargingthe transistor 101 having a higher mobility and the transistor 101having a lower mobility for the same period of time, Vgs in the case ofusing the former transistor can be low, and Vgs in the case of using thelatter transistor can be high. That is, by appropriately setting thedischarging time, variations in mobility can be corrected in acquiringVgs. As a result, variations in luminance due to the variations inmobility can be reduced. Specifically, the period 202 is finished beforeVgs reaches the threshold voltage Vth of the transistor 101 having ahigh mobility.

Note that if the difference between the potential of the node 144 andthe potential of the wiring 132 becomes larger than V_(EL) by increasingthe potential of the node 144, a current flows through the load 150 toprevent the difference between the potential of the node 143 and thepotential of the node 144 from reaching Vth, in some cases. For thisreason, Vsig is preferably set so as to satisfy the relation of Formula3. However, Vsig is not limited to this example in one embodiment of thepresent invention.

Vsig≦V _(EL) +V3+Vth  [FORMULA 3]

In this embodiment, it is assumed that Vsig is 5 V to 0 V, V_(EL) is 1V, V3 is 2 V, and Vth is 2 V. These assumed values satisfy the relationof Formula 3.

In the period 202, the switch 112 may be either in an on state or an offstate, or alternatively the state of the switch 112 may be changed inthe period 202. In the case of acquiring Vsig in the period 202 as shownin the flow chart of FIG. 2B, the switch 113 is in an off state and theswitch 111 and the switch 112 are in an on state in the period 202. Inthe case of acquiring Vsig in the period 201, the switch 112 may be inan off state in the period 202 to make the node 142 in a floating state.In other words, Vsig is written to the capacitor 121 in one of theperiod 201 and the period 202 or in both of the periods. In the case ofwriting Vsig in both of the periods, long time can be spent in inputtingthe signal; consequently, the signal can be input more precisely.

Next in the period 203, the switches 111 to 115 are in an off state toperform an operation of holding the acquired Vsig and Vth (see FIG. 5Aand FIG. 7C). At this time, a voltage (Vsig−V1) is held in the capacitor121, and a voltage that depends on Vth is held in the capacitor 122. Itis preferable that (Vsig−V1) be higher than 0 V at this time, in orderto supply a current from the transistor 101 to the load 150 in theperiod 205. However, in the case of displaying a black image, in orderto further reduce an off-state current of the transistor 101, (Vsig−V1)is set to be a negative voltage in some cases. This can further lowerthe luminance in displaying a black image, improving contrast.

Since the nodes 141 to 144 are in a floating state in the period 203,even when the potentials of the wirings 133 to 135 vary, the voltageswritten to the capacitor 121 and the capacitor 122 can be held.

Note that in the period 203, the switch 115 may be in an on state, whichcan suppress unnecessary light emission from the load 150.

In the period 203, the conduction between the wiring 133 and the node141 is not established. Therefore, in the case where another pixelcircuit 100 is connected to the wiring 133, the period 201 can start inthe pixel circuit 100. That is, the switch 111 may be in an on state inanother pixel circuit 100. In this way, even under conditions where aplurality of pixel circuits 100 is connected to the wiring 133, it ispossible to provide periods enough to operate each pixel circuit 100;accordingly, a precise signal can be acquired.

In this embodiment, a voltage of 5 V to 0 V is held in the capacitor 121and 2 V is held in the capacitor 122.

Note that the period 204 can be provided after the period 202 withoutproviding the period 203.

Next in the period 204, an operation of adding the voltage of thecapacitor 121 to the voltage of the capacitor 122 is performed. The sumof the voltages is Vgs of the transistor 101. In the period 204, theswitch 111, the switch 112, and the switch 114 are turned off, and theswitch 113 and the switch 115 are turned on. Then, the capacitor 121 andthe capacitor 122 are connected in series, so that a sum of the voltagesheld in the capacitor 121 and the capacitor 122 is applied between thegate and the source of the transistor 101 (see FIG. 5B and FIG. 7D).

In this embodiment, Vsig and Vth are acquired independently, and thenthe operation of adding the voltages is performed. That is, the Vthacquisition operation, the Vsig acquisition operation, and the operationof adding Vth to Vsig are not performed at the same time.

At this time, it is preferable that after the switch 111, the switch112, and the switch 114 are turned off, the switch 113 and the switch115 are turned on. This is because when the switch 112 and the switch113 are in an on state at the same time for example, there arises apossibility that V1 may be supplied to the node 143 to fluctuate thevoltage held in the capacitor 122.

Note that when the switch 113 is in an on state in the period 204, thevoltage of the capacitor 121 is added to the voltage of the capacitor122 to make the transistor 101 in a conduction state, so that currentflows. Further, by making the switch 115 in an on state, the potentialof the node 144 is fixed at V2. Consequently, the aforementioned currentflows to not the load 150 but the wiring 135 through the switch 115, andthe load 150 does not emit light.

The potential of the node 141 at the moment in which the switch 113 isturned on can be expressed as 2×Vsig−V1. The difference between thepotential of the node 141 and the potential of the node 144 correspondsto Vgs, and Vgs can be expressed as Vsig−V1+Vth. In this embodiment,since V1 is assumed to be 0 V, Vgs can be expressed as Vsig+Vth.

Next in the period 205, the switch 115 is turned off. Then, a currentcorresponding to Vgs flows through the transistor 101 and the load 150.The potential of the node 144 is increased in accordance with the valueof the flowing current, and the load 150 (the light-emitting element inthis embodiment) emits light (see FIG. 6 and FIG. 8).

If the switch 115 is turned off in the period 204, the period 205 for animage displaying operation starts right after the period 204 or insubstantially the same period as the period 204.

Since the nodes 141 to 143 are in a floating state, the potentials ofthe nodes 141 to 143 also increase in accordance with the increase inthe potential of the node 144. That is, since the gate potential of thetransistor 101 increases in accordance with the increase in thepotential of the source of the transistor 101, Vgs of the transistor 101does not change. In other words, a bootstrap operation is performed.

When using the structure disclosed in this embodiment, even when Vth ofthe transistor 101 is changed due to deteriorations or the like, avoltage that depends on the changed Vth can be held in the capacitor122. That is, even when Vth of the transistor 101 is changed, a currentcorresponding to Vsig can be precisely supplied to the load 150.

Furthermore, even when Vth of the transistor 101 varies among theplurality of pixel circuits 100, Vth of the transistor 101 can beregarded as substantially the same without variations among the pixelcircuits 100. Accordingly, by employing the structure disclosed in thisembodiment for a display device, the display device can have favorablyhigh display quality.

Furthermore, Vth and Vsig of the transistor 101 can be written todifferent capacitors and then the voltages can be added and supplied asVgs of the transistor 101. This method enables each of the operations ofacquiring the voltages to be performed precisely, so that variations inpotential due to distortion of a signal waveform can be prevented. Inthis embodiment, by employing the structure disclosed in this embodimentfor a display device, the display device can have favorably high displayquality.

Further, with the structure disclosed in this embodiment, Vth and Vsigcan be held after being acquired; accordingly, it is possible to startflowing a current to the load 150 with an enough time margin.Accordingly, the load on a peripheral driver circuit can be reduced andpower consumption can be reduced.

In the period 205, a current I flowing through the load 150 in the casewhere the transistor 101 operates in a saturation region can beexpressed by Formula 4.

$\begin{matrix}{I = {\frac{1}{2}\left( \frac{W}{L} \right)\mu \; {{Cox}({Vsig})}^{2}}} & \left\lbrack {{FORMULA}\mspace{14mu} 4} \right\rbrack\end{matrix}$

In the period 205, the current I flowing through the load 150 in thecase where the transistor 101 operates in a linear region can beexpressed by Formula 5.

$\begin{matrix}{I = {\left( \frac{W}{L} \right)\mu \; {{Cox}\left\lbrack {{({Vsig}){Vds}} - {\frac{1}{2}{Vds}^{2}}} \right\rbrack}}} & \left\lbrack {{FORMULA}\mspace{14mu} 5} \right\rbrack\end{matrix}$

In the formulae, W is the channel width of the transistor 101; L, thechannel length; μ, the mobility; Cox, accumulated capacitance; and Vds,voltage between the drain and the source.

According to Formulae 4 and 5, the current flowing to the load 150 doesnot depend on Vth of the transistor 101 in both cases where theoperation region of the transistor 101 is the saturation region andwhere the operation region is the linear region. Therefore, variationsin the current I caused by variations in Vth of the transistor 101 canbe suppressed and a current value corresponding to luminance data can besupplied to the load 150.

Accordingly, variations in the luminance of the load 150 caused byvariations in Vth of the transistor 101 can be suppressed.

Furthermore, when the transistor 101 is operated in the saturationregion, it is also possible to suppress variations in luminance causedby deterioration of the load 150 or variations in characteristics of theload 150. When the load 150 deteriorates, V_(EL) of the load 150 andvoltage-current characteristics of the load 150 vary, whereby thepotential of the node 144 also varies. That is, the potential of thesource of the transistor 101 varies. At this time, the gate of thetransistor 101 is connected to the node 141, and the gate of thetransistor 101 is in a floating state. Therefore, in accordance with thevariations in the potential of the source, the potential of the gate ofthe transistor 101 also variations by the same amount as the variationsin the potential of the source. Accordingly, since Vgs of the transistor101 does not change in accordance with the change in V_(EL), a currentflowing to the transistor 101 and the load 150 is not affected even ifthe load 150 deteriorates. Note that it is found also in Formula 4 thatthe current I flowing to the load 150 does not depend on the potentialof the source and the potential of the drain.

Accordingly, in the case of operating the transistor 101 in a saturationregion, variations in the current flowing through the transistor 101caused by deteriorations and variations in characteristics of thetransistor 101 and the load 150 can be suppressed.

Note that in the case of operating the transistor 101 in the saturationregion, as the channel length L is shorter, a larger amount of currenteasily flows by avalanche breakdown when a drain voltage is extremelyincreased.

When the drain voltage is increased to exceed a pinch-off voltage, apinch-off point moves to the source side and an effective channel lengthwhich substantially functions as a channel decreases. This increases acurrent value, and such a phenomenon is called channel length modulationor the kink effect. Note that the pinch-off point is a boundary portionat which the channel disappears and the thickness of the channel belowthe gate in that portion is 0. In addition, the pinch-off voltage meansa voltage at the time when the pinch-off point is at the drain edge.This phenomenon will also occur more easily as the channel length L isshorter.

Accordingly, in the case of operating the transistor 101 in thesaturation region, the current I with respect to Vds is preferably asconstant as possible. Thus, the channel length L of the transistor 101is preferably longer. For example, the channel length L of thetransistor is preferably larger than the channel width W. In addition,the channel length L is preferably more than or equal to 10 μm and lessthan or equal to 50 μm, and further preferably more than or equal to 15μm and less than or equal to 40 μm. It is preferable that the transistor101 have a longer channel length L than other transistors included inthe pixel circuit 100 (e.g., the switches 111 to 115 in the case ofusing transistors as the switches 111 to 115) or transistors included inthe circuits 181 to 185. However, the channel length L and the channelwidth W of the transistor 101 are not limited to the ranges describedhere.

Note that since the number of minority carriers is remarkably small in achannel formation region of the transistor including an oxidesemiconductor, the pinch-off phenomenon is unlikely to occur. Thus, byusing a transistor including an oxide semiconductor in a channelformation region as the transistor 101, influence of the deteriorationof the load 150 can be made small.

Note that since variations of the current value caused by variations inVth of the transistor can be suppressed as described above, a supplydestination of current controlled by the transistor in the presentinvention is not particularly limited. Therefore, an EL element (anorganic EL element, an inorganic EL element, or an EL element includingboth an organic material and an inorganic material) can be typicallyused as the load 150. Alternatively, an electron emitter, a liquidcrystal element, electronic ink, or the like can be used.

Note that it is only necessary for the transistor 110 to have a functionof controlling a current or voltage supplied to the load 150, so thatvarious types of transistors can be used as the transistor 101 without aparticularly limitation. For example, a thin film transistor (TFT) usinga crystalline semiconductor film, a thin film transistor using anon-single crystal semiconductor film typified by amorphous silicon orpolycrystalline silicon, a transistor formed using a semiconductorsubstrate or an SOI substrate, a MOS transistor, a junction transistor,a bipolar transistor, a transistor using a compound semiconductor suchas GaAS or CdTe, a transistor using an oxide semiconductor such as ZnOor InGaZnO, a transistor using an organic semiconductor or a carbonnanotube, or the like can be used as the transistor 101.

Note that by using parasitic capacitance generated in the pixel circuit100 or the gate capacitance of the transistor 101 as the capacitor 121and the capacitor 122, the capacitor 121 and the capacitor 122 can beomitted. The pixel configuration disclosed in this embodiment is only anexample; therefore, one or more of the transistor 101, the load 150, theswitch 111, the switch 112, the switch 113, the switch 114, the switch115, the capacitor 121, and the capacitor 122 can be omitted orconnection relations of these components can be changed within the scopeof technical idea of the present invention. Further, part of or all ofthe configuration may be provided with another element or wiring.

Thus, one embodiment of the present invention can be rephrased as asemiconductor device which includes or does not include the transistor101, which includes or does not include the load 150, which includes ordoes not include the switch 111, which includes or does not include theswitch 112, which includes or does not include the switch 113, whichincludes or does not include the switch 114, which includes or does notinclude the switch 115, which includes or does not include the capacitor121, and which includes or does not include the capacitor 122.

Further, although an example of the operation of the pixel circuit 100has been described using the periods 201 to 205 here, the example of theoperation disclosed in this embodiment is only an example; therefore,one or more of the periods 201 to 205 can be omitted. The order of theperiods can be changed, or another period can be newly added within thescope of technical idea of the present invention. Furthermore, part orall of the periods 201 to 205 may be provided with an operation that isnot disclosed in this embodiment.

Thus, one embodiment of the present invention can be rephrased as amethod for driving a semiconductor device which includes or does notinclude the period 201, which includes or does not include the period202, which includes or does not include the period 203, which includesor does not include the period 204, and which includes or does notinclude the period 205.

The formulae used in the above description are strictly for describingan example of the operation conditions. Therefore, it is needless to saythat in one embodiment of the present invention, the above formulae mayor may not be used.

Further, configurations illustrated in FIG. 9, FIG. 10, FIG. 11, FIG.12, FIG. 13, and FIG. 14 can be used. In these circuits, Vth of thetransistor 101 can be acquired.

The pixel circuit 100 illustrated in FIG. 9 has a configuration in whicha switch 171 is provided between the node 141 and the node 145 and acapacitor 123 is provided between the node 144 and the wiring 132 in thepixel circuit 100 illustrated in FIG. 1. The Vth acquisition in thepixel circuit 100 illustrated in FIG. 9 can be performed in thefollowing manner. First, as an initialization operation, the switch 111and the switch 113 are turned off, and then the switch 171, the switch114, and the switch 115 are turned on. When the switch 113 is in an offstate, the switch 112 may be either in an on state or an off state. Whenthe switch 113 is in an on state, it is preferable to set the switch 112in an off state. Further, because electric charge of the capacitor 121is released when the switch 113 is in an on state, the switch 113 ispreferably set in an off state when prevention of the release isdesired, although the switch 113 may be in an on state. The potentialsof the node 141 and the node 145 are VDD, and the potential of the node144 is V2. At this time, the transistor 101 is in an on state, so that acurrent flows between the node 145 and the node 144. The potential ofthe node 144 is kept at V2, and a current does not flow through the load150. Next, as a Vth acquisition operation, the switch 115 is turned off,so that the potential of the node 144 is increased until the differencebetween the potential of the node 141 and the potential of the node 144reaches a voltage that is substantially equal to Vth. Then, the switch114 is turned off, whereby the voltage that is substantially equal toVth is held in the capacitor 122. After the Vth acquisition operation,it is preferable to turn off the switch 171.

In the pixel circuit 100 illustrated in FIG. 9, after adding the voltageof the capacitor 121 to the voltage of the capacitor 122 in the period204, a period 2041 (not illustrated) for turning off the switch 111, theswitch 112, and the switch 114 and turning on the switch 113 and theswitch 171 may be provided. Note that in the period 2041, the switch 115may be either in an on state or an off state.

In the period 2041, the voltage between the gate and the source of thetransistor 101 is decreased by dVx in accordance with the length of theperiod 2041. Note that dVx is the amount of potential change thatchanges in accordance with the length of the period 2041 and electriccharacteristics of the transistor such as mobility.

By setting the length of the period 2041 as appropriate and setting thevoltage between the gate and the source of the transistor 101 to adesired value, variations in the mobility of the transistors 101 amongpixels can be reduced and degradation of display quality due to thevariations in the mobility of the transistors 101 can be suppressed.Further, by adjusting the capacitance of the capacitor 123, dVx can bechanged. Although one terminal of the capacitor 123 is connected to thewiring 132 in FIG. 9, the connection relation of one terminal of thecapacitor 123 is not limited to this as long as one terminal of thecapacitor 123 is at least connected to a wiring that supplies a fixedpotential in the period 2041. For example, one terminal of the capacitor123 may be connected to the wiring 134, the wiring 135, or a wiring thatsupplies a common potential (not illustrated).

Note that the capacitor 123 can be provided in the pixel circuit 100having a configuration other than that illustrated in FIG. 9. Further,the period 2041 can also be applied in the pixel circuit 100 having aconfiguration other than that illustrated in FIG. 9, to reducevariations in the mobility of the transistors 101.

Even when the period 2041 is not employed, the capacitor 123 can beprovided in the pixel circuit 100. On the other hand, the period 2041can be provided without provision of the capacitor 123.

The pixel circuit 100 illustrated in FIG. 10 has a configuration inwhich one terminal of the switch 171 is connected to the node 141 in thepixel circuit 100 illustrated in FIG. 1. The other terminal of theswitch 171 is connected to a circuit 186. The circuit 186 can have aconfiguration similar to those of the circuits 181 to 185. The circuit186 supplies a potential that turns on the transistor 101 to the node141 through the switch 171. The Vth acquisition in the pixel circuit 100illustrated in FIG. 10 can be performed in a manner similar to that ofthe pixel circuit 100 illustrated in FIG. 9. Note that in this case, thepotential of the gate of the transistor 101 at the time when the switch171 is in an on state can be controlled using the circuit 186.Accordingly, by setting the potential of the gate of the transistor 101low, the potential of the node 141 can be adjusted so as not to becomeexcessively high at the Vth acquisition operation. Since the potentialof the node 141 does not become excessively high, a current does noteasily flow to the load 150. Further, since the potential of the gate ofthe transistor 101 can be controlled, even when the transistor 101 is anormally-on (depletion) transistor, Vth can be acquired without fault.

The pixel circuit illustrated in FIG. 11 has a configuration in which aswitch 172 is provided between the node 145 and the wiring 131 in thepixel circuit 100 illustrated in FIG. 9. The Vth acquisition in thepixel circuit 100 illustrated in FIG. 11 can be performed in thefollowing manner. First, as an initialization operation, the switch 111and the switch 113 are turned off, and then the switch 171, the switch172, the switch 114, and the switch 115 are turned on. When the switch113 is in an off state, the switch 112 may be either in an off state oran off state. When the switch 113 is in an on state, it is preferable toset the switch 112 in an off state. Further, because electric charge ofthe capacitor 121 is released when the switch 113 is in an on state, theswitch 113 is preferably set in an off state when prevention of therelease is desired, although the switch 113 may be in an on state. Thepotentials of the node 141 and the node 145 are VDD, and the potentialof the node 144 is V2. At this time, the transistor 101 is in an onstate, so that a current flows between the node 145 and the node 144.The potential of the node 144 is kept at V2, and a current does not flowthrough the load 150. Next, as a Vth acquisition operation, the switch172 is turned off, so that electric charge accumulated in the capacitor122 moves in the initialization operation and the potential of the node145 is increased until when the difference between the potential of thenode 141 and the potential of the node 144 reaches a voltage that issubstantially equal to Vth. Then, the switch 114 is turned off, wherebythe voltage that is substantially equal to Vth is held in the capacitor122. After the Vth acquisition operation, it is preferable to turn offthe switch 171. In the Vth acquisition operation, the switch 115 may beeither in an on state or an off state. However, it is preferable to setthe switch 115 in an on state in order to stabilize the potential of thenode 144.

The pixel circuit 100 illustrated in FIG. 12 has a configuration inwhich a switch 174 is provided between the node 144 and the load 150 inthe pixel circuit 100 illustrated in FIG. 9. The Vth acquisition in thepixel circuit 100 illustrated in FIG. 12 can be performed in a mannersimilar to that in the pixel circuit 100 illustrated in FIG. 9. When theswitch 174 is in an off state in the initialization operation and theVth acquisition operation, unnecessary current flow to the load 150 canbe prevented even if Formula 1 is not satisfied. Accordingly, the degreeof freedom in setting the potentials for the pixel circuit 100 can beincreased.

The pixel circuit 100 illustrated in FIG. 13 has a configuration inwhich the switch 174 is provided between the node 144 and the load 150in the pixel circuit 100 illustrated in FIG. 1. The Vth acquisition inthe pixel circuit 100 illustrated in FIG. 13 can be performed in amanner similar to that in the pixel circuit 100 illustrated in FIG. 1.When the switch 174 is in an off state in the initialization operationand the Vth acquisition operation, unnecessary current flow to the load150 can be prevented even if Formula 1 is not satisfied. Accordingly,the degree of freedom in setting the potentials for the pixel circuit100 can be increased. Further, by setting the switch 174 in an offstate, current flow through the transistor 101 and the load 150 can beprevented. In the case of providing a period in which a current does notflow through the load 150, the provision of such a period can beachieved by controlling the switch 174.

The pixel circuit 100 illustrated in FIG. 14 has a configuration inwhich the switch 115 is removed from the pixel circuit 100 illustratedin FIG. 13. The Vth acquisition in the pixel circuit 100 illustrated inFIG. 14 can be performed in a manner similar to that in the pixelcircuit 100 illustrated in FIG. 1 except the point that the operation ofthe switch 115 is unnecessary. The Vth acquisition in the pixel circuit100 illustrated in FIG. 14 can be performed by turning off the switch174 in the Vth acquisition operation. In the periods for operationsother than the Vth acquisition operation, the switch 174 is in an onstate. Accordingly, the conduction between the node 144 and the wiring132 is established in the initialization operation; thus, a currentflows through the load 150. In other words, in the case of using alight-emitting element as the load 150, light emission is obtained atthe initialization period; however, the initialization period isperformed in an extremely short time, so that substantial degradation ofdisplay quality is not caused.

In the pixel circuits 100 illustrated in FIG. 9, FIG. 10, FIG. 11, FIG.12, FIG. 13, and FIG. 14, when the switch 113 is in an off state in theinitialization period and the Vth acquisition operation, the switch 112may be either in an on state or an off state. In the pixel circuit 100illustrated in FIG. 9, FIG. 10, FIG. 11, FIG. 12, FIG. 13, and FIG. 14,Vsig is acquired in the periods for the operations other than theinitialization and the Vth acquisition operations; accordingly, Vsigneed not satisfy Formula 2. Accordingly, the degree of freedom insetting the potentials for the pixel circuit 100 can be increased.Further, since the initialization operation and the Vth acquisitionoperation are performed during the time when the switch 111 is in an offstate, the initialization operation and the Vth acquisition operationcan be performed regardless of the potential of the wiring 133.Accordingly, adequately long periods for the initialization operationand the Vth acquisition operation can be ensured. In the pixel circuits100 illustrated in FIG. 12, FIG. 13, and FIG. 14, the provision of theswitch 174 between the node 144 and the load 150 eliminates the need toconsider the conditions in Formula 3. Thus, the degree of freedom insetting the potentials for the pixel circuit 100 can be increased.

In this embodiment, an example in which an n-channel transistor is usedas the transistor 101 has been described; however, a p-channeltransistor may be used as the transistor 101. FIG. 15 illustrates anexample of a pixel circuit in which a p-channel transistor is used asthe transistor 101. In the case of using a p-channel transistor as thetransistor 101, the potential supplied to the wiring 131 is set lowerthan V2 and V3, for example, the potential VSS (hereinafter simplyreferred to as VSS). Of electrode included in the load 150, theelectrode connected to the wiring 132 serves as an anode, and theelectrode connected to the node 144 serves as a cathode. Further,Formulae 1 to 3 can be applied to the configuration example disclosed inFIG. 15 by reversing the inequality signs in Formulae 1 to 3.

Alternatively, p-channel transistors may be used as the switches 111 to115, and an n-channel transistor may be used as the transistor 101.Furthermore, the switches included in the pixel circuit 100 may havedifferent conductivity types. For example, the switch 111 may be ap-channel transistor, the switch 112 may be an n-channel transistor, theswitch 113 may be a p-channel transistor, the switch 114 may be ann-channel transistor, and the switch 115 may be a p-channel transistor.

FIG. 16 illustrates an arrangement example of the pixel circuits 100illustrated in FIG. 1. In FIG. 16, the pixel circuit 100(R) correspondsto a pixel for red (R), the pixel circuit 100(G) corresponds to a pixelfor green (G), and the pixel circuit 100(B) corresponds to a pixel forblue (B). In one embodiment of the present invention, at least one of atransistor 101(R) in the pixel circuit 100(R), a transistor 101(G) inthe pixel circuit 100(G), and a transistor 101(B) in the pixel circuit100B may differ from the others in the ratio between the channel widthand the channel length. With the above structure, currents supplied to aload 150(R) in the pixel circuit 100(R), a load 150(G) in the pixelcircuit 100(G), and a load 150(B) in the pixel circuit 100(B) can be setat different values. As the load 150(R), the load 150(G), and the load150(B), light-emitting elements for the respective colors may be used.

The pixel circuit 100(R) is connected to a wiring 131(R), a wiring132(R), a wiring 133(R), a wiring 134(R), and a wiring 135(R). The pixelcircuit 100(G) is connected to a wiring 131(G), a wiring 132(G), awiring 133(G), a wiring 134(G), and a wiring 135(G). The pixel circuit100(B) is connected to a wiring 131(B), a wiring 132(B), a wiring133(B), a wiring 134(B), and a wiring 135(B).

FIG. 17A illustrates another arrangement example, which is differentfrom that in FIG. 16. FIG. 17A illustrates an example in which a commonwiring 131 is used to serve as the wiring 131(R), the wiring 131(G), andthe wiring 131(B), to which the corresponding pixels are connected inFIG. 16. The wiring 131 is arranged so as to intersect with the wiring133(R), the wiring 133(G), and the wiring 133(B).

FIG. 17A illustrates an example in which a common wiring 135 is used toserve as the wiring 135(R), the wiring 135(G), and the wiring 135(B), towhich the corresponding pixels are connected in FIG. 16. In addition,FIG. 17A illustrates an example in which a common wiring 132 is used toserve as the wiring 132(R), the wiring 132(G), and the wiring 132(B), towhich the corresponding pixels are connected in FIG. 16. Furthermore,FIG. 17A illustrates an example in which a common wiring 134 is used toserve as the wiring 134(R), the wiring 134(G), and the wiring 134(B), towhich the corresponding pixels are connected in FIG. 16.

When the configuration illustrated in FIG. 17A is used, the areaoccupied by wirings in the region where the pixels are provided can bereduced by the space for the removed wirings. Accordingly, higherintegration is easy, and a display device with favorable display qualitycan be obtained. In addition, integration of the semiconductor devicecan be easy. Further, since the number of peripheral circuits can bereduced in accordance with the removal of the wirings, the number ofcomponents constituting the display device can be reduced, leading toimprovements in productivity and reliability of the display device.

FIG. 17B illustrates a configuration example in which the wiring 134 andthe wiring 135 connected to the pixel circuits 100 illustrated in FIG.17A are omitted and the terminals connected to the wiring 134 and thewiring 135 in FIG. 17A are connected to the wiring 132. With theconfiguration illustrated in FIG. 17B, the area occupied by wirings inthe region where the pixels are provided can be further reduced.

Part of or the whole of the wirings 131 to 135 in FIG. 16 and FIGS. 17Aand 17B may be arranged so as to cross each other or run parallel toeach other.

Note that the switch 111, the switch 112, the switch 113, the switch114, and the switch 115 in FIG. 1 can be transistors, for example. FIG.18 is a circuit diagram illustrating an example where n-channeltransistors are used as the switch 111, the switch 112, the switch 113,the switch 114, and the switch 115. Note that the components which arethe same as those in the configuration in FIG. 1 are denoted by commonreference numerals, and thus description thereof is omitted. By usingthe transistors all having the same conductivity type as illustrated inFIG. 18, the semiconductor device can be manufactured through a smallernumber of steps, whereby manufacturing cost can be reduced. Note that ap-channel transistor can be used as at least one of the switch 111, theswitch 112, the switch 113, the switch 114, and the switch 115.

In FIG. 18, a transistor 111T corresponds to the switch 111. Atransistor 112T corresponds to the switch 112. A transistor 113Tcorresponds to the switch 113. A transistor 114T corresponds to theswitch 114. A transistor 115T corresponds to the switch 115.

A gate of the transistor 111T is connected to a wiring 161, a firstterminal thereof is connected to the wiring 133, and a second terminalthereof is connected to the node 141. Therefore, the transistor 111T isin a conduction state when the potential of the wiring 161 is at an Hlevel, and the transistor 111T is in a non-conduction state when thepotential of the wiring 161 is at an L level.

A gate of the transistor 112T is connected to a wiring 162, a firstterminal thereof is connected to the wiring 134, and a second terminalthereof is connected to the node 142. Therefore, the transistor 112T isin a conduction state when the potential of the wiring 162 is at an Hlevel, and the transistor 112T is in a non-conduction state when thepotential of the wiring 162 is at an L level.

Further, a gate of the transistor 113T is connected to a wiring 163, afirst terminal thereof is connected to the node 142, and a secondterminal thereof is connected to the node 143. Therefore, the transistor113T is in a conduction state when the potential of the wiring 163 is atan H level, and the transistor 113T is in a non-conduction state whenthe potential of the wiring 163 is at an L level.

A gate of the transistor 114T is connected to a wiring 164, a firstterminal thereof is connected to the node 141, and a second terminalthereof is connected to the node 143. Therefore, the transistor 114T isin a conduction state when the potential of the wiring 164 is at an Hlevel, and the transistor 114T is in a non-conduction state when thepotential of the wiring 164 is at an L level.

A gate of the transistor 115T is connected to a wiring 165, a firstterminal thereof is connected to the wiring 135, and a second terminalthereof is connected to the node 144. Therefore, the transistor 115T isin a conduction state when the potential of the wiring 165 is at an Hlevel, and the transistor 115T is in a non-conduction state when thepotential of the wiring 165 is at an L level.

For example, the wiring 161 is connected to a circuit 186A, the wiring162 is connected to a circuit 186B, the wiring 163 is connected to acircuit 186C, the wiring 164 is connected to a circuit 186D, and thewiring 165 is connected to a circuit 186E. For example, the circuits186A to 186E each have a function of supplying at least a signal at an Hlevel or an L level. Note that the circuits 186A to 186E may each be anindividual circuit, or some of them may form one circuit collectively.An example of each of the circuits 186A to 186E is a gate driver (scanline driver circuit) or the like. Accordingly, the wiring 161 has afunction of transmitting or supplying a signal at an H level or an Llevel. Alternatively, the wiring 161 has a function of controlling theconduction state of the switch 111 or the transistor 111T. Further, thewiring 162 has a function of controlling the conduction state of theswitch 112 or the transistor 112T. The wiring 163 has a function ofcontrolling the conduction state of the switch 113 or the transistor113T. Further, the wiring 164 has a function of controlling theconduction state of the switch 114 or the transistor 114T. Further, thewiring 165 has a function of controlling the conduction state of theswitch 115 or the transistor 115T.

Note that the wiring 161, the wiring 162, the wiring 163, the wiring164, and the wiring 165 can be provided as different wirings. However,the structure of the wirings is not limited to this structure in oneaspect of an embodiment of the present invention, and one wiring canserve as the plurality of wirings. Thus, the circuit can be formed witha smaller number of wirings.

In many cases, the transistor 101 operates in a saturation region at thetime of passing current. Therefore, the transistor 101 preferably has alonger channel length or gate length than the transistor 111T, thetransistor 112T, the transistor 113T, the transistor 1141, and thetransistor 1151. When the channel length or the gate length isincreased, characteristics in a saturation region have a flat slope;accordingly, a kink effect can be reduced. Note that in one aspect of anembodiment of the present invention, the structure of the transistor 101is not limited to this example.

In many cases, the transistor 101 operates in a saturation region at thetime of passing current. Therefore, the transistor 101 preferably has alonger channel width or gate width than any of or all of the transistor111T, the transistor 1121, the transistor 1131, the transistor 1141, andthe transistor 1151. When the channel width or the gate width isincreased, a large amount of current can flow even when the transistor101 operates in a saturation region. Note that in one aspect of anembodiment of the present invention, the channel width or gate width ofthe transistor 101 is not limited to this example, and may be the sameas or shorter than any of or all of the channel widths or gate width ofthe transistor 111T, the transistor 1121, the transistor 113T, thetransistor 114T, and the transistor 115T.

FIG. 19 is a block diagram illustrating a configuration example of adisplay device to which the pixel circuit 100 illustrated in FIG. 18 isapplied.

For example, the display device includes a signal line driver circuit301, a scan line driver circuit 302A, a scan line driver circuit 302B, ascan line driver circuit 302C, a scan line driver circuit 302D, a scanline driver circuit 302E, a potential supply circuit 303, a potentialsupply circuit 304, a potential supply circuit 305, a potential supplycircuit 306, and a pixel region 310. The pixel region 310 is providedwith a plurality of signal lines S1 to Sn extended in the columndirection from the signal line driver circuit 301. The pixel region 310is further provided with a plurality of scan lines Ga1 to Gam extendedin the row direction from the scan line driver circuit 302A. The pixelregion 310 is further provided with a plurality of scan lines Gb1 to Gbmextended in the row direction from the scan line driver circuit 302B.The pixel region 310 is further provided with a plurality of scan linesGc1 to Gcm extended in the row direction from the scan line drivercircuit 302C. The pixel region 310 is further provided with a pluralityof scan lines Gd1 to Gdm extended in the row direction from the scanline driver circuit 302D. The pixel region 310 is further provided witha plurality of scan lines Ge1 to Gem extended in the row direction fromthe scan line driver circuit 302E.

The pixel region 310 is provided with a plurality of wirings Ba1 to Banextended in the column direction from the potential supply circuit 303.The pixel region 310 is provided with a plurality of wirings Bb1 to Bbnextended in the column direction from the potential supply circuit 304.The pixel region 310 is provided with a plurality of wirings P1 to Pnextended in the column direction from the potential supply circuit 305.The pixel region 310 is provided with a plurality of wirings L1 to Lnextended in the column direction from the potential supply circuit 306.

The pixel region 310 is provided with a plurality of pixel circuits 100arranged in a matrix. Each of the pixel circuits 100 is connected to thesignal line Sj (one of the signal lines S1 to Sn), the scan line Gai(one of the scan lines Ga1 to Gam), the scan line Gbi (one of the scanlines Gb1 to Gbm), the scan line Gci (one of the scan lines Gc1 to Gcm),the scan line Gdi (one of the scan lines Gd1 to Gdm), the scan line Gei(one of the scan lines Ge1 to Gem), the wiring Baj (one of the wiringsBa1 to Ban), the wiring Bbj (one of the wirings Bb1 to Bbn), the wiringPj (one of the wirings P1 to Pn), and the wiring Lj (one of the wiringsL1 to Ln).

The scan line Gai corresponds to the wiring 161 in FIG. 18. The scanline Gbj corresponds to the wiring 132 in FIG. 18. The scan line Gcjcorresponds to the wiring 163 in FIG. 18. The scan line Gdj correspondsto the wiring 164 in FIG. 18. The scan line Gej corresponds to thewiring 165 in FIG. 18. The signal line Sj corresponds to the wiring 133in FIG. 18. The wiring Pj corresponds to the wiring 131 in FIG. 18. Thewiring Lj corresponds to the wiring 132 in FIG. 18.

Note that the wiring Pj can be shared by pixels horizontally adjacent toeach other. For example, one wiring is provided for two pixels; thus,the number of wirings can be reduced. Further, the wiring Lj can beshared by pixels horizontally adjacent to each other. For example, onewiring is provided for two pixels; thus, the number of wirings can bereduced.

Note that the wiring Pj can be extended in the row direction to beparallel to the scan line Gai and the like. In that case, the wiring Pjcan be shared by pixels vertically adjacent to each other. For example,one wiring is provided for two pixels; thus, the number of wirings canbe reduced. Further, the wiring Lj can be extended in the row directionto be parallel to the scan line Gai and the like. In that case, thewiring Lj can be shared by pixels vertically adjacent to each other. Forexample, one wiring is provided for two pixels; thus, the number ofwirings can be reduced.

FIG. 20 illustrates a configuration example in which the wiring 135connected to the pixel circuit 100 illustrated in FIG. 18 is omitted andthe first terminal of the transistor 112T and the first terminal of thetransistor 115T are connected to the wiring 134. With thisconfiguration, the area occupied by wirings in the region where thepixel is provided can be reduced by the space for the removed wiring135. Further, since the circuit 185 is unnecessary, the number ofcomponents constituting the display device can be reduced, leading toimprovements in productivity and reliability of the display device.

FIG. 45 illustrates a configuration example in which the wiring 162connected to the pixel circuit 100 illustrated in FIG. 18 is omitted andthe gate of the transistor 112T is connected to the wiring 161. Withthis configuration, the area occupied by wirings in the region where thepixel is provided can be reduced by the space for the removed wiring162. Further, since the circuit 186B is unnecessary, the number ofcomponents constituting the display device can be reduced, leading toimprovements in productivity and reliability of the display device.

FIG. 46 illustrates a configuration example in which the transistor 114Tin the pixel circuit 100 illustrated in FIG. 18 is a p-channeltransistor, the wiring 164 connected to the pixel circuit 100 isomitted, and the gate of the transistor 114T is connected to the wiring163. With this configuration, the area occupied by wirings in the regionwhere the pixel is provided can be reduced by the space for the removedwiring 164. Further, since the circuit 186D is unnecessary, the numberof components constituting the display device can be reduced, leading toimprovements in productivity and reliability of the display device.

FIG. 47 illustrates a configuration example in which the transistor111T, the transistor 112T, and the transistor 113T in the pixel circuit100 illustrated in FIG. 18 are p-channel transistors, the wiring 162 andthe wiring 164 connected to the pixel circuit 100 are omitted, the gateof the transistor 112T is connected to the wiring 161, and the gate ofthe transistor 114T is connected to the wiring 163. With thisconfiguration, the area occupied by wirings in the region where thepixel is provided can be reduced by the space for the removed wirings162 and 164. Further, since the circuit 186B and the circuit 186D areunnecessary, the number of components constituting the display devicecan be reduced, leading to improvements in productivity and reliabilityof the display device.

FIG. 48 illustrates a configuration example in which the wiring 134 andthe wiring 135 connected to the pixel circuit 100 illustrated in FIG. 18are omitted, the first terminal of the transistor 112T is connected to anode 146, and the first terminal of the transistor 115T is connected toa node 147. The node 146 and the node 147 are connected to any of thewirings 161 to 165 which control the conduction states of thetransistors in a row different from the row of the pixel circuit 100.With this configuration, the area occupied by wirings in the regionwhere the pixel is provided can be reduced by the space for the removedwirings 134 and 135. Further, since the circuit 184 and the circuit 185are unnecessary, the number of components constituting the displaydevice can be reduced, leading to improvements in productivity andreliability of the display device.

FIG. 49 illustrates a configuration example in which an n-channeltransistor is used as the switch 171 of the pixel circuit 100illustrated in FIG. 9. The description of the components which are thesame as those in the configuration described with reference to otherdrawings is omitted. In FIG. 49, a transistor 171T corresponds to theswitch 171 in FIG. 9. A gate of the transistor 171T is connected to awiring 166, one of a source and a drain thereof is connected to the node141, and the other of the source and the drain thereof is connected tothe node 145. The wiring 166 is connected to a circuit 186F. The circuit186F has a function similar to those of the circuits 186A to 186E. Forexample, the circuit 186F has a function of supplying at least a signalat an H level or an L level to the wiring 166. Further, the wiring 166has a function of controlling the conduction state of the switch 171 orthe transistor 171T.

FIG. 50 illustrates a configuration example in which the wiring 166connected to the pixel circuit 100 illustrated in FIG. 49 is omitted andthe gate of the transistor 171T included in the pixel circuit 100 isconnected to the wiring 164. With this configuration, the area occupiedby wirings in the region where the pixel is provided can be reduced bythe space for the removed wiring 166. Further, since the circuit 186F isunnecessary, the number of components constituting the display devicecan be reduced, leading to improvements in productivity and reliabilityof the display device. Further, the gate of the transistor 171T may beconnected to the wiring 161 or the wiring 162 in one row before the rowin which the transistor 171T is provided.

FIG. 51 illustrates a configuration example in which the other of thesource and the drain of the transistor 171T included in the pixelcircuit 100 illustrated in FIG. 49 is connected to a circuit 187.Examples of the circuit 187 include a power supply circuit, an amplifiercircuit, and the like. The circuit 187 is not limited to a circuit thatoutputs only a constant potential, and a circuit that outputs aninconstant potential, for example, a pulsed signal may be used. Examplesof the circuit 187 in such a case include a digital circuit, a shiftregister circuit, a scan line driver circuit, and the like.

FIG. 52 illustrates a configuration example in which an n-channeltransistor is used as the switch 172 included in the pixel circuit 100illustrated in FIG. 11. The description of the components which are thesame as those in the configuration described with reference to otherdrawings is omitted. In FIG. 52, a transistor 172T corresponds to theswitch 172 in FIG. 11. A gate of the transistor 172T is connected to awiring 167, one of a source and a drain thereof is connected to the node145, and the other of the source and the drain thereof is connected tothe wiring 131. The wiring 167 is connected to a circuit 186G. Thecircuit 186G has a function similar to those of the circuits 186A to186F. For example, the circuit 186G has a function of supplying at leasta signal at an H level or an L level to the wiring 167. Further, thewiring 167 has a function of controlling the conduction state of theswitch 172 or the transistor 172T.

FIG. 53 illustrates a configuration example in which an n-channeltransistor is used as the switch 174 included in the pixel circuit 100illustrated in FIG. 13. The description of the components which are thesame as those in the configuration described with reference to otherdrawings is omitted. In FIG. 53, a transistor 174T corresponds to theswitch 174. A gate of the transistor 174T is connected to the wiring166, one of a source and a drain thereof is connected to the load 150,and the other of the source and the drain is connected to the node 144.

Note that the operation of correcting variations in threshold voltage orthe like of a transistor is performed in this embodiment; however, suchan operation is not necessarily performed in one embodiment of thepresent invention. For example, without performing the operation ofcorrecting variations in threshold voltage, current can be supplied tothe load 150 to operate the semiconductor device.

This embodiment is obtained by performing change, addition,modification, removal, application, superordinate conceptualization, orsubordinate conceptualization on part or the whole of anotherembodiment. Thus, part of or the whole of this embodiment can be freelycombined with or replaced with part of or the whole of anotherembodiment.

Embodiment 2

In this embodiment, configuration examples in which any of the pixelcircuits described in the above embodiment is used as a current sourcefor supplying a current to a load in part of a signal line drivercircuit of a display device are described with reference to FIG. 21,FIG. 22, FIG. 23, and FIG. 24.

A display device 51 illustrated in FIG. 21 includes a pixel region 52, agate line driver circuit 53, and a signal line driver circuit 54. Thegate line driver circuit 53 sequentially outputs a selection signal tothe pixel region 52. The signal line driver circuit 54 sequentiallyoutputs a video signal to the pixel region 52. The pixel region 52includes a plurality of pixels and displays an image by controlling thestate of light in accordance with the video signal. The video signalinput from the signal line driver circuit 54 to the pixel region 52 is acurrent. That is, the states of a display element and an element forcontrolling the display element disposed in each pixel are changed bythe video signal (current) input from the signal line driver circuit 54.Examples of the display element disposed in a pixel include an ELelement, an element used in a field emission display (FED), a liquidcrystal element, electronic ink, an electrophoretic element, and agrating light valve (GLV). Examples of a display device using a liquidcrystal element include a liquid crystal display (e.g., a transmissiveliquid crystal display, a transflective liquid crystal display, areflective liquid crystal display, a direct-view liquid crystal display,or a projection liquid crystal display). Examples of a display deviceusing electronic ink or an electrophoretic element include electronicpaper.

Note that a plurality of gate line driver circuits 53 and a plurality ofsignal line driver circuits 54 may be provided.

The structure of the signal line driver circuit 54 can be divided into aplurality of portions. For example, the signal line driver circuit 54can be roughly divided into a shift register 55, a first latch circuit(LAT1) 56, a second latch circuit (LAT2) 57, and a digital-analogconverter circuit 58. The digital-analog converter circuit 58 has afunction of converting a voltage into a current, and it may also have afunction of performing gamma correction. In other words, thedigital-analog converter circuit 58 has a circuit which outputs acurrent (video signal) to a pixel, that is, a current source circuit. Asthe current source circuit, any of the pixel circuits described in theabove embodiment can be used.

The operation of the signal line driver circuit 54 is briefly described.The shift register 55 is formed using a plurality of columns offlip-flop circuits (FFs) and the like, and a clock signal (S-CLK), astart pulse (SP), and an inverted clock signal (S-CLKb) are input to theshift register 55. Sampling pulses are sequentially output in accordancewith the timing of these signals.

The sampling pulses output from the shift register 55 are input to thefirst latch circuit (LAT1) 56. A video signal VS is input to the firstlatch circuit (LAT1) 56 from a video signal line. The first latchcircuit 56 holds the video signal in each column in accordance with thetiming at which the sampling pulse is input. Note that the video signalhas a digital value in the case where the digital-analog convertercircuit 58 is provided. Further, the video signal at this stage is avoltage in many cases.

However, in the case where the first latch circuit 56 and the secondlatch circuit 57 are circuits which can store analog values, thedigital-analog converter circuit 58 can be omitted in many cases. Inthat case, the video signal is a current in many cases. Further, in thecase where data output to the pixel region 52 has a binary value, thatis, a digital value, the digital-analog converter circuit 58 can beomitted in many cases.

After holding of video signals is completed up to the last column in thefirst latch circuit (LAT1) 56, a latch pulse (LP) is input from a latchcontrol line in a horizontal retrace period, and the video signals whichhave been held in the first latch circuit (LAT1) 56 are transferred tothe second latch circuit (LAT2) 57 all at once. After that, the videosignals held in the second latch circuit (LAT2) 57 for one row are inputto the digital-analog converter circuit 58 at a time. Then, signalsoutput from the digital-analog converter circuit 58 are input to thepixel region 52.

While the video signals held in the second latch circuit (LAT2) 57 areinput to the digital-analog converter circuit 58 and then input to thepixel region 52, sampling pulses are output from the shift register 55again. In other words, two operations are performed concurrently.Accordingly, line sequential driving can be performed. Hereafter, theabove operation is repeated.

In the case where the current source circuit in the digital-analogconverter circuit 58 is a circuit which performs setting operation andoutput operation, a circuit for supplying a current to the currentsource circuit is needed. In that case, a reference current sourcecircuit 59 is provided.

Note that the signal line driver circuit or part thereof may be formedusing, for example, an external IC chip instead of being provided overthe same substrate as the pixel region 52. In that case, the IC chip andthe substrate are connected by chip on glass (COG) or tape automatedbonding (TAB) or using a printed board or the like.

Note that the structure of the display device, the signal line drivercircuit, or the like is not limited to that in FIG. 21.

For example, in the case where the first latch circuit 56 and the secondlatch circuit 57 can store analog values, the video signal VS (analogcurrent) is input to the first latch circuit (LAT1) 56 from a referencecurrent source circuit 60 as illustrated in FIG. 22 in some cases.Further, the second latch circuit 57 is not provided in FIG. 22 in somecases.

Next, a specific configuration where any of the pixel circuits describedin the above embodiment is used as a current source circuit in thesignal line driver circuit 54 is described.

First, FIG. 23 illustrates an example of a circuit configuration of thecurrent source circuit applied to the signal line driver circuit. Acircuit 190 illustrated in FIG. 23 has almost the same configuration asthe pixel circuit 100 described with reference to FIG. 1 inEmbodiment 1. Note that components in common with those in the pixelcircuit 100 are denoted by common reference numerals, and descriptionthereof is omitted. In accordance with the potential Vsig supplied fromthe circuit 183, the circuit 190 illustrated in FIG. 23 can output acurrent which is less affected by variations in the threshold voltage ofthe transistor 101.

Supply of the current which is less affected by variations in thethreshold voltage set in the circuit 190 is controlled by the switchingof a switch 70 provided between the circuit 190 and the load 17. In thatcase, for example, it is possible to provide a plurality of circuits 190and a plurality of switches 70 and to control the amount of currentflowing to the load 17 with the plurality of switches 70.

For example, a configuration illustrated in FIG. 24 can be employed. Inthe configuration, circuits 190_1 to 10_3 are provided as the pluralityof circuits 190; a switch 70_1, a switch 70_2, and a switch 70_3 areprovided as the plurality of switches 70; and the amount of currentflowing to the load 17 is controlled by the switch 70_1, the switch70_2, and the switch 70_3. The potential Vsig may be set by the circuit183 so that the amount of current supplied from the circuit 190 variesor is equal among the circuits 190_1 to 190_3, and the amount of currentflowing to the load 17 may be controlled by switching of the switches.

This embodiment is obtained by performing change, addition,modification, removal, application, superordinate conceptualization, orsubordinate conceptualization on part or the whole of anotherembodiment. Thus, part of or the whole of this embodiment can be freelycombined with or replaced with part of or the whole of anotherembodiment.

Embodiment 3

In this embodiment, configuration examples of the pixel circuitillustrated in FIG. 18 is described with reference to FIG. 25, FIGS. 26Aand 26B, FIG. 27, FIG. 28, FIG. 29, FIG. 30, FIG. 31, FIG. 32, FIGS. 33Aand 33B, and FIG. 34.

FIG. 25 is a top view illustrating the configuration corresponding tothe pixel circuit illustrated in FIG. 18. FIG. 26A is a cross-sectionalview taken along two-dot chain line A1-A2 in FIG. 25, and FIG. 26B is across-sectional view taken along two-dot chain line B1-B2 in FIG. 25.

In FIG. 25, components corresponding to those in FIG. 18, that is, thetransistor 101, the transistor 111T, the transistor 112T, the transistor113T, the transistor 114T, the transistor 115T, the load 150 (only oneof the electrodes is illustrated), the capacitor 121, the capacitor 122,the wiring 109, the wiring 161, the wiring 162, the wiring 163, the 164,the wiring 165, the wiring 132, the wiring 134, and the wiring 135 areillustrated. In the example described in this embodiment, the load 150is a light-emitting element (e.g., EL element).

The components illustrated in FIG. 25 includes a conductive layer 851, asemiconductor layer 852, a conductive layer 853, a conductive layer 854,a conductive layer 855, a contact hole 856, and a contact hole 858. Inthe top views used in this embodiment, a substrate and insulating layersare not illustrated.

The conductive layer 851 has regions functioning as a gate electrode anda scan line. Note that the conductive layer 851 is formed over asubstrate over which elements such as the transistors are provided.

Although there is no particular limitation on a substrate used as thesubstrate, a glass substrate is preferably used. Examples of thesubstrate include a semiconductor substrate (e.g., a single crystalsubstrate or a silicon substrate), an SOI substrate, a quartz substrate,a plastic substrate, a metal substrate, a stainless steel substrate, asubstrate including stainless steel foil, a tungsten substrate, asubstrate including tungsten foil, a flexible substrate, an attachmentfilm, paper including a fibrous material, and a base material film. Asan example of the glass substrate, there are a barium borosilicate glasssubstrate, an aluminoborosilicate glass substrate, soda lime glasssubstrate, and the like. For the flexible substrate, a flexiblesynthetic resin such as plastics typified by polyethylene terephthalate(PET), polyethylene naphthalate (PEN), and polyether sulfone (PES), oracrylic can be used, for example. Examples of the attachment film arepolypropylene, polyester, polyvinyl fluoride, polyvinyl chloride, andthe like. Examples of the base film are polyester, polyamide, polyimide,inorganic vapor deposition film, paper, and the like. Specifically, whena transistor is formed using a semiconductor substrate, a single crystalsubstrate, an SOI substrate, or the like, a transistor with fewvariations in characteristics, size, shape, or the like, high currentsupply capability, and a small size can be formed. By forming a circuitusing such transistors, power consumption of the circuit can be reducedor the circuit can be highly integrated.

Note that a transistor may be formed using one substrate, and then, thetransistor may be transferred to another substrate. Example of asubstrate to which a transistor is transferred are, in addition to theabove-described substrate over which the transistor can be formed, apaper substrate, a cellophane substrate, a stone substrate, a woodsubstrate, a cloth substrate (including a natural fiber (e.g., silk,cotton, or hemp), a synthetic fiber (e.g., nylon, polyurethane, orpolyester), a regenerated fiber (e.g., acetate, cupra, rayon, orregenerated polyester), or the like), a leather substrate, and a rubbersubstrate. By using such a substrate, transistors with excellentproperties or transistors with low power consumption can be formed, adevice with high durability or high heat resistance can be formed, orreduction in weight or thickness can be achieved.

A base insulating layer may be sandwiched between the substrate and theconductive layer 851. The base insulating layer is preferably formedwith a single layer or a stacked layer using a material selected fromsilicon nitride, silicon oxide, silicon nitride oxide, siliconoxynitride, aluminum nitride, aluminum oxide, aluminum nitride oxide,and aluminum oxynitride. The base insulating layer formed using any ofthese materials can prevent diffusion of an impurity element from thesubstrate.

In this specification, a nitride oxide refers to a material containing alarger amount of nitrogen than oxygen, and an oxynitride refers to amaterial containing a larger amount of oxygen than nitrogen. The contentof each element can be measured by Rutherford backscatteringspectrometry (RBS), for example.

The conductive layer 851 can be formed to have a single-layer structureor a stacked structure using one or more of metal materials such asmolybdenum (Mo), titanium (Ti), chromium (Cr), tantalum (Ta), tungsten(W), aluminum (Al), magnesium (Mg), copper (Cu), neodymium (Nd), andscandium (Sc) and an alloy material containing any of these metalmaterials as a main component.

The semiconductor layer 852 has regions in which channels are formed.

The semiconductor layer 852 may include amorphous silicon. Thesemiconductor layer 852 may include polycrystalline silicon.Alternatively, the semiconductor layer 852 may include an organicsemiconductor, an oxide semiconductor, or the like.

The conductive layer 853 has regions functioning as wirings and sourcesand drains of the transistors.

The conductive layer 853 can be formed using an element selected fromMo, Ti, Cr, Ta, W, Al, Mg, or Cu, an alloy including any of theseelements as a component, an alloy film including a combination of any ofthese elements, or the like. Alternatively, a structure may be employedin which a high-melting-point metal layer of Ti, Mo, W, or the like isstacked over one of or both of the upper side and lower side of a metallayer of Al, Cu, or the like. In addition, heat resistance can beimproved by using an Al material to which an element (Si, Nd, Sc, or thelike) which prevents generation of a hillock or a whisker in an Al filmis added.

Alternatively, the conductive layer 853 may be formed using a conductivemetal oxide. As the electrically conductive metal oxide, indium oxide(In₂O₃), tin oxide (SnO₂), zinc oxide (ZnO), indium oxide-tin oxide(In₂O₃—SnO₂; abbreviated to ITO), indium oxide-zinc oxide (In₂O₃—ZnO),or any of these metal oxide materials in which silicon oxide iscontained can be used.

The conductive layer 855 has a region functioning as one of theelectrodes of the load 150 (in this embodiment, a light-emittingelement). The conductive layer 855 is formed using a material having afunction of reflecting light in the case where light emitted from theload 150 is extracted from the counter substrate side. The conductivelayer 855 is formed using a material having a function of transmittinglight in the case where light emitted from the light-emitting element isextracted from the element substrate side.

The contact hole 856 has a function of connecting the conductive layer851 to the conductive layer 853. An insulating layer 401 functioning asa gate insulating layer is sandwiched between the conductive layer 851and the conductive layer 853.

The insulating layer 401 can be formed with a single-layer structure ora stacked-layer structure using silicon oxide, silicon nitride, siliconoxynitride, silicon nitride oxide, aluminum oxide, aluminum nitride,aluminum oxynitride, aluminum nitride oxide, or hafnium oxide by plasmaCVD, sputtering, or the like.

The contact hole 858 has a function of connecting the conductive layer853 to the conductive layer 855. An insulating layer 403 providing theplanarity of a surface is sandwiched between the conductive layer 853and the conductive layer 855. For the insulating layer providing theplanarity of the surface, an organic material such as polyimide, acrylicresin, or benzocyclobutene-based resin can be used. Other than suchorganic materials, it is also possible to use a low-dielectric constantmaterial (a low-k material) or the like.

An insulating layer 402 functioning as a passivation layer may beprovided between the conductive layer 853 and the conductive layer 855.For the passivation layer, an inorganic insulator such as siliconnitride, aluminum nitride, silicon nitride oxide, or aluminum nitrideoxide can be used. As illustrated in FIG. 26A, the insulating layer 402functioning as a passivation layer and the insulating layer 403providing the planarity of a surface may be stacked between theconductive layer 853 and the conductive layer 855.

Next, a cross-sectional structure of the transistor 101 and thecapacitor 121, which are illustrated in the top view of FIG. 25, isdescribed with reference to FIGS. 26A and 26B.

In the example illustrated in FIG. 25 and FIG. 26A, the transistor 101is a bottom-gate transistor. The bottom-gate transistor 101 illustratedin FIG. 25 and FIG. 26A is also called an inverted staggered transistor.Note that there is no particular limitation on the structure of thetransistor; for example, a staggered transistor or a planar transistorhaving a top-gate structure or a bottom-gate structure can be employed.The transistor may have a single gate structure including one channelformation region in a semiconductor layer, a double gate structureincluding two channel formation regions in a semiconductor layer, or atriple gate structure including three channel formation regions in asemiconductor layer. Alternatively, the transistor may have a dual-gatestructure including two gate electrode layers positioned over and belowa channel formation region with a gate insulating layer providedtherebetween.

The transistor 101 illustrated in FIG. 26A includes, over a substrate400, the conductive layer 851 serving as a gate, the insulating layer401 functioning as a gate insulating layer, the semiconductor layer 852,and the conductive layer 853 serving as a source and a drain. Theinsulating layer 402 functioning as a passivation layer is formed tocover the transistor 101. The insulating layer 403 providing theplanarity of a surface is provided over the insulating layer 402.

The capacitor 121 illustrated in the cross-sectional view of FIG. 26Bincludes, over the substrate 400, the conductive layer 851 serving asone electrode, the insulating layer 401, the semiconductor layer 852,and the conductive layer 853 serving as the other electrode. Theinsulating layer 402 functioning as a passivation layer is provided soas to cover the capacitor 121. An insulating layer 403 providing theplanarity of the surface is formed over the insulating layer 402.

The pixel configuration that can be applied to the display device is notlimited to the configuration illustrated in the top view of FIG. 25 andmay be other configurations.

A top view of a pixel having a configuration different from that in FIG.25 is illustrated in FIG. 27. FIG. 27 is different from FIG. 25 in thatthe size of the transistor 101 which allows the circuit to function as acurrent source is larger than the size of the transistor functioning asa switch. With this structure, the amount of current flowing through thetransistor 101 which allows the circuit to function as a current sourcecan be increased.

FIG. 28 and FIG. 29 are top views of pixels each having a differentconfiguration from those in FIG. 25 and FIG. 27. FIG. 28 and FIG. 29 aredifferent from FIG. 25 and FIG. 27 in that the electrode serving as theother terminal of the transistor 101 has a U-shape to surround theelectrode serving as the one terminal. This structure enables thechannel width to be set long even when the area of the transistor issmall; accordingly, the amount of current flowing through the transistor101 which allows the circuit to function as a current source can beincreased. Further, a parasitic capacitance generated at the U-shapedelectrode serving as the other terminal can be higher than a parasiticcapacitance generated at the electrode serving as the one terminal ofthe transistor 101.

Note that, in the case where pixel circuits (pixels) of FIG. 18including light-emitting elements of different colors as the loads 150are arranged in parallel, the pixel circuits may have different sizes ofthe capacitor 122 or the transistor 101 which allows the circuit tofunction as a current sources depending on the color. The top view ofFIG. 30 illustrates a configuration example of the pixel circuit inwhich the size of the transistor 101 which allows the circuit tofunction as a current source is varied depending color. A transistor101R in FIG. 30 is a transistor which allows the circuit to function asa current source, in a pixel including a red light emitting load 150. Atransistor 101G in FIG. 30 is a transistor which allows the circuit tofunction as a current source, in a pixel including a green lightemitting load 150. A transistor 101B in FIG. 30 is a transistor whichallows the circuit to function as a current source, in a pixel includinga blue light emitting load 150. A capacitor 122R in FIG. 30 is acapacitor in the pixel including the red light emitting load 150. Acapacitor 122G in FIG. 30 is a capacitor in the pixel including thegreen light emitting load 150. A capacitor 122B in FIG. 30 is acapacitor in the pixel including the blue light emitting load 150. Withthis structure, a proper amount of current can be supplied to the loads150 of each color.

Note that, in the case where pixel circuits (pixels) of FIG. 18including light-emitting elements of different colors as the loads 150are arranged in parallel, the pixel circuits may have different widthsof the wiring 131 functioning as a power supply line depending on thecolor. The top view of FIG. 31 illustrates a configuration in which thewidth of the wiring 131 functioning as a power supply line is varieddepending color. A wiring 131R in FIG. 31 is a wiring for supplying acurrent to the red light emitting load 150. A wiring 131G in FIG. 31 isa wiring for supplying a current to the green light emitting load 150. Awiring 131B in FIG. 31 is a wiring for supplying a current to the bluelight emitting load 150. With this structure, a proper amount of currentcan be supplied to the loads 150 of each color.

In the case where the pixel circuits (pixels) in FIG. 18 includinglight-emitting elements of different colors as the loads 150 arearranged in parallel, the pixel circuits may have different areas of theelectrode of the load 150 depending on the color. A configuration inwhich the area of the electrode of the load 150 is varied dependingcolor is illustrated also in the top view of FIG. 31. The load 150R inFIG. 31 is the red light emitting load 150. The load 150G in FIG. 31 isthe green light emitting load 150. The load 150B in FIG. 31 is the bluelight emitting load 150. With this structure, the balance of theluminance among the colors can be adjusted.

The above top views illustrate an inverted staggered transistor as eachtransistor, but the transistors may be top-gate transistors. FIG. 32 isa top view where each transistor included in a pixel circuit is atop-gate transistor. FIG. 33A is a cross-sectional view taken alongtwo-dot chain line C1-C2 in FIG. 32, and FIG. 33B is a cross-sectionalview taken along two-dot chain line D1-D2 in FIG. 32. Compared with FIG.25 in the points other than the structure of the transistors, FIG. 32has more contact holes 859.

The contact holes 859 are provided in the insulating layer 401 and theinsulating layer 412 and have a function of connecting the semiconductorlayer 852 to the conductive layer 853.

In the case where the transistors included in the pixel circuit aretop-gate transistors as illustrated in FIG. 32, semiconductor layers ofthe transistors are preferably formed using amorphous silicon orpolycrystalline silicon. With this structure, the semiconductor layercan be used as a wiring between transistors in such a manner that animpurity element such as phosphorus or boron is introduced into thesemiconductor layer to increase conductivity thereof.

Here, a cross-sectional structure of the transistor 101 and thecapacitor 121, which are illustrated in the top view of FIG. 32, isdescribed with reference to FIGS. 33A and 33B.

FIG. 33A illustrates an example of a cross-sectional structure of atop-gate transistor that can be applied to the transistor 101. FIG. 33Billustrates an example of a cross-sectional structure that can beapplied to the capacitor 121.

The top-gate transistor 101 illustrated in FIG. 32 and FIG. 33A is alsocalled a planar transistor. The transistor may have a single gatestructure including one channel formation region, a double gatestructure including two channel formation regions, or a triple gatestructure including three channel formation regions. Alternatively, thetransistor may have a dual gate structure including two gate electrodelayers positioned over and below a channel region with a gate insulatinglayer provided therebetween.

The transistor 101 illustrated in the cross-sectional view of FIG. 33Aincludes, over the substrate 400, the semiconductor layer 852 includingimpurity regions 852 n into which an impurity is introduced to improveconductivity, the insulating layer 401 functioning as a gate insulatinglayer, the conductive layer 851 serving as a gate, the insulating layer412 functioning as an interlayer insulating layer, and the conductivelayer 853 functioning as a source and a drain. An insulating layer 413providing the planarity of the surface is formed to cover the insulatinglayer 412 and the conductive layer 853.

The capacitor 121 illustrated in the cross-sectional view of FIG. 33Bincludes, over the substrate 400, the insulating layer 401, theconductive layer 851 serving as one electrode, the insulating layer 412,and the conductive layer 853 serving as the other electrode. Theinsulating layer 413 providing the planarity of the surface is formed tocover the insulating layer 412 and the conductive layer 853.

FIG. 34 is a top view illustrating the structure utilizing, as a wiring,the semiconductor layer whose conductivity is increased by introductionof an impurity element such as phosphorus or boron. The semiconductorlayer whose conductivity is increased is denoted by 860 in FIG. 34.

This embodiment is obtained by performing change, addition,modification, removal, application, superordinate conceptualization, orsubordinate conceptualization on part or the whole of anotherembodiment. Thus, part of or the whole of this embodiment can be freelycombined with or replaced with part of or the whole of anotherembodiment.

Embodiment 4

In this embodiment, a circuit configuration where each transistorincluded in the pixel circuit of the display device described withreference to FIG. 18 in the above embodiment is a transistor includingan oxide semiconductor in its semiconductor layer in which a channel isformed will be described.

A pixel circuit 600 illustrated in FIG. 35 has a configuration where atransistor including an oxide semiconductor in its semiconductor layerin which a channel is formed is used as each transistor included in thepixel circuit 100 illustrated in FIG. 18. A transistor 601, a transistor611T, a transistor 612T, a transistor 613T, a transistor 614T, and atransistor 615T in FIG. 35 correspond to the transistor 101, thetransistor 111T, the transistor 112T, the transistor 113T, thetransistor 114T, and the transistor 115T in FIG. 18. By using an oxidesemiconductor in a semiconductor layer in which a channel is formed,off-state current of the transistor can be reduced. Accordingly,malfunctions can be reduced in the circuit configuration.

Note that in this specification, the off-state current is a current thatflows between a source and a drain when a transistor is off. In the caseof an n-channel transistor (whose threshold voltage is, for example,about 0 V to 2 V), the off-state current refers to a current flowingbetween the source and the drain when a negative voltage is appliedbetween the gate and the source.

Next, an oxide semiconductor used in a semiconductor layer in which achannel is formed will be described.

As the oxide semiconductor, for example, a four-component metal oxidesuch as an In—Sn—Ga—Zn-based oxide semiconductor; a three-componentmetal oxide such as an In—Ga—Zn-based oxide semiconductor, anIn—Sn—Zn-based oxide semiconductor, an In—Al—Zn-based oxidesemiconductor, a Sn—Ga—Zn-based oxide semiconductor, an Al—Ga—Zn-basedoxide semiconductor, a Sn—Al—Zn-based oxide semiconductor, or aHf—In—Zn-based oxide semiconductor; a two-component metal oxide such asan In—Zn-based oxide semiconductor, a Sn—Zn-based oxide semiconductor,an Al—Zn-based oxide semiconductor, a Zn—Mg-based oxide semiconductor, aSn—Mg-based oxide semiconductor, an In—Mg-based oxide semiconductor, oran In—Ga-based oxide semiconductor; or a single-component metal oxidesuch as an In-based oxide semiconductor, a Sn-based oxide semiconductor,or a Zn-based oxide semiconductor can be used. In addition, any of theabove oxide semiconductors may contain an element other than In, Ga, Sn,and Zn, for example, SiO₂.

For example, an In—Sn—Zn-based oxide semiconductor refers to an oxidesemiconductor containing indium (In), tin (Sn), and zinc (Zn), and thereis no particular limitation on the composition thereof. Further, forexample, an In—Ga—Zn-based oxide semiconductor refers to an oxidesemiconductor containing indium (In), gallium (Ga), and zinc (Zn), andthere is no limitation on the composition thereof. An In—Ga—Zn-basedoxide semiconductor can be referred to as IGZO.

In the case where an In—Sn—Zn-based oxide semiconductor is deposited bysputtering, a target which has a composition of In:Sn:Zn=1:2:2, 2:1:3,1:1:1, 20:45:35, or the like in an atomic ratio is used.

In the case where an In—Zn-based oxide semiconductor is deposited bysputtering, a target which has a composition of In:Zn=50:1 to 1:2 in anatomic ratio (In₂O₃:ZnO=25:1 to 1:4 in a molar ratio), preferablyIn:Zn=20:1 to 1:1 in an atomic ratio (In₂O₃:ZnO=10:1 to 1:2 in a molarratio), further preferably In:Zn=1.5:1 to 15:1 in an atomic ratio(In₂O₃:ZnO=3:4 to 15:2 in a molar ratio) is used. For example, in atarget which has an atomic ratio of In:Zn:O=X:Y:Z, an inequality ofZ>1.5X+Y is satisfied.

In the case where an In—Ga—Zn-based oxide semiconductor is deposited bysputtering, a target which has a composition of In:Ga:Zn=1:1:0.5, 1:1:1,or 1:1:2 in an atomic ratio is used.

When the purity of the target is set to 99.99% or higher, alkali metal,a hydrogen atom, a hydrogen molecule, water, a hydroxyl group, ahydride, or the like mixed into the oxide semiconductor can be reduced.In addition, when the target is used, the concentration of alkali metalsuch as lithium, sodium, or potassium can be reduced in the oxidesemiconductor.

Note that it has been pointed out that an oxide semiconductor isinsensitive to impurities, there is no problem even when a considerableamount of metal impurities is contained in the film, and therefore,soda-lime glass which contains a large amount of alkali metal such assodium (Na) and is inexpensive can be used (Kamiya, Nomura, and Hosono,“Carrier Transport Properties and Electronic Structures of AmorphousOxide Semiconductors: The present status”, KOTAI BUTSURI (SOLID STATEPHYSICS), 2009, Vol. 44, pp. 621-633). However, such consideration isnot appropriate. Alkali metal is not a constituent element of an oxidesemiconductor, and therefore, is an impurity. Likewise, alkaline earthmetal is an impurity in the case where alkaline earth metal is not aconstituent element of an oxide semiconductor. Alkali metal, inparticular, Na becomes Na⁺ when an insulating film in contact with theoxide semiconductor layer is an oxide and Na diffuses into theinsulating film. Further, in the oxide semiconductor layer, Na cuts orenters a bond between metal and oxygen which constitute the oxidesemiconductor. As a result, for example, deterioration incharacteristics of a transistor, such as a negative shift of thresholdvoltage, which leads to a normally-on state of the transistor, or adecrease in mobility, occurs. In addition, variation in characteristicsoccurs. Such deterioration in characteristics of the transistor andvariation in the characteristics due to the impurity remarkably appearwhen the concentration of hydrogen in the oxide semiconductor layer issufficiently low. Therefore, when the hydrogen concentration in theoxide semiconductor layer is lower than or equal to 1×10¹⁸/cm³,preferably lower than or equal to 1×10¹⁷/cm³, the concentration of theabove impurity is preferably reduced. Specifically, the Na concentrationmeasured by secondary ion mass spectrometry is preferably lower than orequal to 5×10¹⁶/cm³, further preferably lower than or equal to1×10¹⁶/cm³, still further preferably lower than or equal to 1×10¹⁵/cm³.Similarly, the measurement value of a Li concentration is preferablyless than or equal to 5×10¹⁵/cm³, further preferably less than or equalto 1×10¹⁵/cm³. Similarly, the measurement value of a K concentration ispreferably less than or equal to 5×10¹⁵/cm³, further preferably lessthan or equal to 1×10¹⁵/cm³.

A structure of an oxide semiconductor film will be described below.

An oxide semiconductor film is classified roughly into a single-crystaloxide semiconductor film and a non-single-crystal oxide semiconductorfilm. The non-single-crystal oxide semiconductor film includes any of anamorphous oxide semiconductor film, a microcrystalline oxidesemiconductor film, a polycrystalline oxide semiconductor film, a c-axisaligned crystalline oxide semiconductor (CAAC-OS) film, and the like.

The amorphous oxide semiconductor film has disordered atomic arrangementand no crystalline component. A typical example thereof is an oxidesemiconductor film in which no crystal part exists even in a microscopicregion, and the whole of the film is amorphous.

The microcrystalline oxide semiconductor film includes a microcrystal(also referred to as nanocrystal) with a size greater than or equal to 1nm and less than 10 nm, for example. Thus, the microcrystalline oxidesemiconductor film has a higher degree of atomic order than theamorphous oxide semiconductor film. Hence, the density of defect statesof the microcrystalline oxide semiconductor film is lower than that ofthe amorphous oxide semiconductor film.

The CAAC-OS film is one of oxide semiconductor films including aplurality of crystal parts, and most of the crystal parts each fitinside a cube whose one side is less than 100 nm. Thus, there is a casewhere a crystal part included in the CAAC-OS film fits inside a cubewhose one side is less than 10 nm, less than 5 nm, or less than 3 nm.The density of defect states of the CAAC-OS film is lower than that ofthe microcrystalline oxide semiconductor film The CAAC-OS film isdescribed in detail below.

In a transmission electron microscope (TEM) image of the CAAC-OS film, aboundary between crystal parts, that is, a grain boundary is not clearlyobserved. Thus, in the CAAC-OS film, a reduction in electron mobilitydue to the grain boundary is less likely to occur.

According to the TEM image of the CAAC-OS film observed in a directionsubstantially parallel to a sample surface (cross-sectional TEM image),metal atoms are arranged in a layered manner in the crystal parts. Eachmetal atom layer has a morphology reflected by a surface over which theCAAC-OS film is formed (hereinafter, a surface over which the CAAC-OSfilm is formed is referred to as a formation surface) or a top surfaceof the CAAC-OS film, and is arranged in parallel to the formationsurface or the top surface of the CAAC-OS film.

On the other hand, according to the TEM image of the CAAC-OS filmobserved in a direction substantially perpendicular to the samplesurface (plan TEM image), metal atoms are arranged in a triangular orhexagonal configuration in the crystal parts. However, there is noregularity of arrangement of metal atoms between different crystalparts.

From the results of the cross-sectional TEM image and the plan TEMimage, alignment is found in the crystal parts in the CAAC-OS film.

A CAAC-OS film is subjected to structural analysis with an X-raydiffraction (XRD) apparatus. For example, when the CAAC-OS filmincluding an InGaZnO₄ crystal is analyzed by an out-of-plane method, apeak appears frequently when the diffraction angle (2θ) is around 31°.This peak is derived from the (009) plane of the InGaZnO₄ crystal, whichindicates that crystals in the CAAC-OS film have c-axis alignment, andthat the c-axes are aligned in a direction substantially perpendicularto the formation surface or the top surface of the CAAC-OS film.

On the other hand, when the CAAC-OS film is analyzed by an in-planemethod in which an X-ray enters a sample in a direction substantiallyperpendicular to the c-axis, a peak appears frequently when 2θ is around56°. This peak is derived from the (110) plane of the InGaZnO₄ crystal.Here, analysis (φ scan) is performed under conditions where the sampleis rotated around a normal vector of a sample surface as an axis (φaxis) with 2θ fixed at around 56°. In the case where the sample is asingle-crystal oxide semiconductor film of InGaZnO₄, six peaks appear.The six peaks are derived from crystal planes equivalent to the (110)plane. On the other hand, in the case of a CAAC-OS film, a peak is notclearly observed even when φ scan is performed with 2θ fixed at around56°.

According to the above results, in the CAAC-OS film having c-axisalignment, while the directions of a-axes and b-axes are differentbetween crystal parts, the c-axes are aligned in a direction parallel toa normal vector of a formation surface or a normal vector of a topsurface. Thus, each metal atom layer arranged in a layered mannerobserved in the cross-sectional TEM image corresponds to a planeparallel to the a-b plane of the crystal.

Note that the crystal part is formed concurrently with deposition of theCAAC-OS film or is formed through crystallization treatment such as heattreatment. As described above, the c-axis of the crystal is aligned in adirection parallel to a normal vector of a formation surface or a normalvector of a top surface. Thus, for example, in the case where a shape ofthe CAAC-OS film is changed by etching or the like, the c-axis might notbe necessarily parallel to a normal vector of a formation surface or anormal vector of a top surface of the CAAC-OS film.

Further, the degree of crystallinity in the CAAC-OS film is notnecessarily uniform. For example, in the case where crystal growthleading to the CAAC-OS film occurs from the vicinity of the top surfaceof the film, the degree of the crystallinity in the vicinity of the topsurface is higher than that in the vicinity of the formation surface insome cases. Further, when an impurity is added to the CAAC-OS film, thecrystallinity in a region to which the impurity is added is changed, andthe degree of crystallinity in the CAAC-OS film varies depending onregions.

Note that when the CAAC-OS film with an InGaZnO₄ crystal is analyzed byan out-of-plane method, a peak of 2θ may also be observed at around 36°,in addition to the peak of 2θ at around 31°. The peak of 2θ at around36° indicates that a crystal having no c-axis alignment is included inpart of the CAAC-OS film. It is preferable that in the CAAC-OS film, apeak of 2θ appear at around 31° and a peak of 2θ do not appear at around36°.

In a transistor using the CAAC-OS film, change in electriccharacteristics due to irradiation with visible light or ultravioletlight is small. Thus, the transistor has high reliability.

Note that an oxide semiconductor film may be a stacked film includingtwo or more films of an amorphous oxide semiconductor film, amicrocrystalline oxide semiconductor film, and a CAAC-OS film, forexample.

Nitrogen may be substituted for part of constituent oxygen of the oxidesemiconductor. Examples of a crystal structure of the CAAC-OS aredescribed in detail with reference to FIGS. 36A to 36E, FIGS. 37A to37C, FIGS. 38A to 38C, and FIGS. 39A and 39B. In FIGS. 36A to 36E, FIGS.37A to 37C, FIGS. 38A to 38C, and FIGS. 39A and 39B, the verticaldirection corresponds to the c-axis direction and a plane perpendicularto the c-axis direction corresponds to the a-b plane, unless otherwisespecified. When the terms “upper half” and “lower half” are simply used,they refer to an upper half above the a-b plane and a lower half belowthe a-b plane (an upper half and a lower half with respect to the a-bplane). Furthermore, in FIGS. 36A to 36E, O surrounded by a circlerepresents a tetracoordinate O atom and O surrounded by a double circlerepresents a tricoordinate O atom.

FIG. 36A illustrates a structure including one hexacoordinate In atomand six tetracoordinate oxygen atoms (hereinafter referred to astetracoordinate O atoms) proximate to the In atom. Here, a structureincluding one metal atom and oxygen atoms proximate thereto is referredto as a small group. The structure in FIG. 36A is actually an octahedralstructure, but is illustrated as a planar structure for simplicity. Notethat three tetracoordinate O atoms exist in each of an upper half and alower half in FIG. 36A. In the small group illustrated in FIG. 36A,electric charge is 0.

FIG. 36B illustrates a structure including one pentacoordinate Ga atom,three tricoordinate oxygen atoms (hereinafter referred to astricoordinate O atoms) proximate to the Ga atom, and two tetracoordinateO atoms proximate to the Ga atom. All the tricoordinate O atoms exist onthe a-b plane. One tetracoordinate O atom exists in each of an upperhalf and a lower half in FIG. 36B. An In atom can also have thestructure illustrated in FIG. 36B because an In atom can have fiveligands. In the small group illustrated in FIG. 36B, electric charge is0.

FIG. 36C illustrates a structure including one tetracoordinate Zn atomand four tetracoordinate O atoms proximate to the Zn atom. In FIG. 36C,one tetracoordinate O atom exists in an upper half and threetetracoordinate O atoms exist in a lower half. Alternatively, threetetracoordinate O atoms may exist in the upper half and onetetracoordinate O atom may exist in the lower half in FIG. 36C. In thesmall group illustrated in FIG. 36C, electric charge is 0.

FIG. 36D illustrates a structure including one hexacoordinate Sn atomand six tetracoordinate O atoms proximate to the Sn atom. In FIG. 36D,three tetracoordinate O atoms exist in each of an upper half and a lowerhalf. In the small group illustrated in FIG. 36D, electric charge is +1.

FIG. 36E illustrates a small group including two Zn atoms. In FIG. 36E,one tetracoordinate O atom exists in each of an upper half and a lowerhalf. In the small group illustrated in FIG. 36E, electric charge is −1.

Here, a plurality of small groups forms a medium group, and a pluralityof medium groups forms a large group (also referred to as a unit).

Now, a rule of bonding between the small groups is described. The threeO atoms in the upper half with respect to the hexacoordinate In atom inFIG. 36A each have three proximate In atoms in the downward direction,and the three O atoms in the lower half each have three proximate Inatoms in the upward direction. The one O atom in the upper half withrespect to the pentacoordinate Ga atom in FIG. 36B has one proximate Gaatom in the downward direction, and the one O atom in the lower half hasone proximate Ga atom in the upward direction. The one O atom in theupper half with respect to the tetracoordinate Zn atom in FIG. 36C hasone proximate Zn atom in the downward direction, and the three O atomsin the lower half each have three proximate Zn atoms in the upwarddirection. In this manner, the number of tetracoordinate O atoms above ametal atom is equal to the number of metal atoms proximate to and beloweach of the tetracoordinate O atoms. Similarly, the number oftetracoordinate O atoms below a metal atom is equal to the number ofmetal atoms proximate to and above each of the tetracoordinate O atoms.Since the coordination number of the tetracoordinate O atom is 4, thesum of the number of metal atoms proximate to and below the O atom andthe number of metal atoms proximate to and above the O atom is 4.Accordingly, when the sum of the number of tetracoordinate O atoms abovea metal atom and the number of tetracoordinate O atoms below anothermetal atom is 4, the two kinds of small groups including the metal atomscan be bonded. The reason is described below. For example, in the casewhere the hexacoordinate metal (In or Sn) atom is bonded through threetetracoordinate O atoms in the lower half, it is bonded to thepentacoordinate metal (Ga or In) atom or the tetracoordinate metal (Zn)atom.

A metal atom whose coordination number is 4, 5, or 6 is bonded toanother metal atom through a tetracoordinate O atom in the c-axisdirection. In addition to the above, a medium group can be formed in adifferent manner by combining a plurality of small groups so that thetotal electric charge of the layered structure is 0.

FIG. 37A illustrates a model of a medium group included in a layeredstructure of an In—Sn—Zn-based oxide. FIG. 37B illustrates a large groupincluding three medium groups. Note that FIG. 37C illustrates an atomicarrangement in the case where the layered structure in FIG. 37B isobserved from the c-axis direction.

In FIG. 37A, a tricoordinate O atom is omitted for simplicity, and atetracoordinate O atom is illustrated by a circle; the number in thecircle shows the number of tetracoordinate O atoms. For example, threetetracoordinate O atoms existing in each of an upper half and a lowerhalf with respect to a Sn atom is denoted by circled 3. In a similarmanner, in FIG. 37A, one tetracoordinate O atom existing in each of anupper half and a lower half with respect to an In atom is denoted bycircled 1. FIG. 37A also illustrates a Zn atom proximate to onetetracoordinate O atom in a lower half and three tetracoordinate O atomsin an upper half, and a Zn atom proximate to one tetracoordinate O atomin an upper half and three tetracoordinate O atoms in a lower half.

In the medium group included in the layered structure of theIn—Sn—Zn-based oxide in FIG. 37A, in the order starting from the top, aSn atom proximate to three tetracoordinate O atoms in each of an upperhalf and a lower half is bonded to an In atom proximate to onetetracoordinate O atom in each of an upper half and a lower half, the Inatom is bonded to a Zn atom proximate to three tetracoordinate O atomsin an upper half, the Zn atom is bonded to an In atom proximate to threetetracoordinate O atoms in each of an upper half and a lower halfthrough one tetracoordinate O atom in a lower half with respect to theZn atom, the In atom is bonded to a small group that includes two Znatoms and is proximate to one tetracoordinate O atom in an upper half,and the small group is bonded to a Sn atom proximate to threetetracoordinate O atoms in each of an upper half and a lower halfthrough one tetracoordinate O atom in a lower half with respect to thesmall group. A plurality of such medium groups is bonded, so that alarge group is formed.

Here, electric charge for one bond of a tricoordinate O atom andelectric charge for one bond of a tetracoordinate O atom can be assumedto be −0.667 and −0.5, respectively. For example, electric charge of a(hexacoordinate or pentacoordinate) In atom, electric charge of a(tetracoordinate) Zn atom, and electric charge of a (pentacoordinate orhexacoordinate) Sn atom are +3, +2, and +4, respectively. Accordingly,electric charge of a small group including a Sn atom is +1. Therefore,electric charge of −1, which cancels +1, is needed to form a layeredstructure including a Sn atom. As a structure having electric charge of−1, the small group including two Zn atoms as illustrated in FIG. 36Ecan be given. For example, with one small group including two Zn atoms,electric charge of one small group including a Sn atom can be cancelled,so that the total electric charge of the layered structure can be 0.

Specifically, when the large group illustrated in FIG. 37B is repeated,a In—Sn—Zn-based oxide crystal (In₂SnZn₃O₈) can be obtained. Note that alayered structure of the obtained In—Sn—Zn-based oxide crystal can beexpressed as a composition formula, In₂SnZn₂O₇(ZnO)_(m) (m is 0 or anatural number).

The above-described rule also applies to the following oxides: afour-component metal oxide such as an In—Sn—Ga—Zn-based oxide; athree-component metal oxide such as an In—Ga—Zn-based oxide (alsoreferred to as IGZO), an In—Al—Zn-based oxide, a Sn—Ga—Zn-based oxide,an Al—Ga—Zn-based oxide, a Sn—Al—Zn-based oxide, an In—Hf—Zn-basedoxide, an In—La—Zn-based oxide, an In—Ce—Zn-based oxide, anIn—Pr—Zn-based oxide, an In—Nd—Zn-based oxide, an In—Sm—Zn-based oxide,an In—Eu—Zn-based oxide, an In—Gd—Zn-based oxide, an In—Tb—Zn-basedoxide, an In—Dy—Zn-based oxide, an In—Ho—Zn-based oxide, anIn—Er—Zn-based oxide, an In—Tm—Zn-based oxide, an In—Yb—Zn-based oxide,or an In—Lu—Zn-based oxide; a two-component metal oxide such as anIn—Zn-based oxide, a Sn—Zn-based oxide, an Al—Zn-based oxide, aZn—Mg-based oxide, a Sn—Mg-based oxide, an In—Mg-based oxide, or anIn—Ga-based oxide; and the like.

As an example, FIG. 38A illustrates a model of a medium group includedin a layered structure of an In—Ga—Zn-based oxide.

In the medium group included in the layered structure of theIn—Ga—Zn-based oxide in FIG. 38A, in the order starting from the top, anIn atom proximate to three tetracoordinate O atoms in each of an upperhalf and a lower half is bonded to a Zn atom proximate to onetetracoordinate O atom in an upper half, the Zn atom is bonded to a Gaatom proximate to one tetracoordinate O atom in each of an upper halfand a lower half through three tetracoordinate O atoms in a lower halfwith respect to the Zn atom, and the Ga atom is bonded to an In atomproximate to three tetracoordinate O atoms in each of an upper half anda lower half through the one tetracoordinate O atom in the lower halfwith respect to the Ga atom. A plurality of such medium groups isbonded, so that a large group is formed.

FIG. 38B illustrates a large group including three medium groups. Notethat FIG. 38C illustrates an atomic arrangement in the case where thelayered structure in FIG. 38B is observed from the c-axis direction.

Here, since electric charge of a (hexacoordinate or pentacoordinate) Inatom, electric charge of a (tetracoordinate) Zn atom, and electriccharge of a (pentacoordinate) Ga atom are +3, +2, and +3, respectively,electric charge of a small group including any of an In atom, a Zn atom,and a Ga atom is 0. As a result, the total electric charge of a mediumgroup having a combination of such small groups is always 0.

In order to form the layered structure of the In—Ga—Zn-based oxide, alarge group can be formed using not only the medium group illustrated inFIG. 38A but also a medium group in which the arrangement of the Inatom, the Ga atom, and the Zn atom is different from that in FIG. 38A.

Specifically, when the large group illustrated in FIG. 38B is repeated,an In—Ga—Zn-based oxide crystal can be obtained. Note that a layeredstructure of the obtained In—Ga—Zn-based oxide crystal can be expressedas a composition formula, InGaO₃(ZnO)_(n) (n is a natural number).

In the case of n=1 (InGaZnO₄), a crystal structure illustrated in FIG.39A can be obtained, for example. Note that, in the crystal structure inFIG. 39A, since a Ga atom and an In atom each have five ligands asdescribed with reference to FIG. 36B, a structure where Ga is replacedwith In can be obtained.

In the case of n=2 (InGaZn₂O₅), a crystal structure illustrated in FIG.39B can be obtained, for example. Note that, in the crystal structure inFIG. 39B, since a Ga atom and an In atom each have five ligands asdescribed with reference to FIG. 36B, a structure where Ga is replacedwith In can be obtained.

For example, a film containing CAAC-OS (hereinafter also referred to asa CAAC-OS film) can be deposited by a sputtering method using apolycrystalline oxide semiconductor sputtering target. When ions collidewith the sputtering target, a crystal region included in the sputteringtarget may be separated from the target along an a-b plane; in otherwords, a sputtered particle having a plane parallel to an a-b plane(flat-plate-like sputtered particle or pellet-like sputtered particle)may flake off from the sputtering target. In that case, theflat-plate-like sputtered particle reaches a substrate while keeping itscrystal state, whereby the crystal state of the sputtering target istransferred to the substrate and the CAAC-OS film can be formed over thesubstrate.

For the deposition of the CAAC-OS film, the following conditions arepreferably used.

By reducing the concentration of impurities during the deposition, thecrystal state can be prevented from being broken by the impurities. Forexample, impurities (e.g., hydrogen, water, carbon dioxide, or nitrogen)which exist in the deposition chamber may be reduced. Furthermore,impurities in a deposition gas may be reduced. Specifically, adeposition gas whose dew point is −80° C. or lower, preferably −100° C.or lower is used.

By increasing the substrate heating temperature during the deposition,migration of a sputtered particle is likely to occur after the sputteredparticle is attached to a substrate surface. Specifically, the substrateheating temperature during the deposition is higher than or equal to100° C. and lower than or equal to 740° C., preferably higher than orequal to 200° C. and lower than or equal to 500° C. By increasing thesubstrate heating temperature during the deposition, when theflat-plate-like sputtered particle reaches the substrate, migrationoccurs on the substrate surface, so that a flat plane of theflat-plate-like sputtered particle is attached to the substrate.

Furthermore, it is preferable that the proportion of oxygen in thedeposition gas be increased and the power be optimized in order toreduce plasma damage at the deposition. The proportion of oxygen in thedeposition gas is 30 vol % or higher, preferably 100 vol %.

As an example of the sputtering target, an In—Ga—Zn-based oxide targetis described below.

The polycrystalline In—Ga—Zn-based oxide target is made by mixingInO_(X) powder, GaO_(Y) powder, and ZnO_(Z) powder in a predeterminedratio, applying pressure, and performing heat treatment at a temperaturehigher than or equal to 1000° C. and lower than or equal to 1500° C.Note that X, Y, and Z are each a given positive number. Here, thepredetermined molar ratio of InO_(X) powder to GaO_(Y) powder andZnO_(Z) powder is, for example, 2:2:1, 8:4:3, 3:1:1, 1:1:1, 4:2:3, or3:1:2. The kinds of powders and the ratio for mixing the powders may bedetermined as appropriate depending on the desired sputtering target.

A film surface where the CAAC-OS film is formed (deposition surface) ispreferably flat. This is because the c-axes of crystal parts in theCAAC-OS film are substantially perpendicular to the deposition surface,and thus roughness of the deposition surface causes grain boundaries inthe CAAC-OS film. For that reason, the deposition surface is preferablysubjected to planarization treatment such as chemical mechanicalpolishing (CMP) before the CAAC-OS film is formed. The average roughnessof the deposition surface is preferably 0.5 nm or less, furtherpreferably 0.3 nm or less.

Note that the oxide semiconductor deposited by sputtering or the likecontains moisture or hydrogen (including a hydroxyl group) as animpurity in some cases. In one embodiment of the present invention, inorder to reduce impurities such as moisture or hydrogen in the oxidesemiconductor (or a semiconductor layer formed containing the oxidesemiconductor) (in order to perform dehydration or dehydrogenation), theoxide semiconductor is subjected to heat treatment in a reduced-pressureatmosphere, an inert gas atmosphere of nitrogen, a rare gas, or thelike, an oxygen gas atmosphere, or ultra dry air (the moisture amount isless than or equal to 20 ppm (−55° C. by conversion into a dew point),preferably less than or equal to 1 ppm, further preferably less than orequal to 10 ppb, in the case where the measurement is performed with adew point meter of a cavity ring down laser spectroscopy (CRDS) system).

By performing heat treatment on the oxide semiconductor, moisture orhydrogen in the oxide semiconductor can be eliminated. Specifically, theheat treatment may be performed at a temperature higher than or equal to250° C. and lower than or equal to 750° C., preferably higher than orequal to 400° C. and lower than the strain point of the substrate. Forexample, the heat treatment may be performed at 500° C. for longer thanor equal to 3 minutes and shorter than or equal to 6 minutes. When anRTA method is used for the heat treatment, dehydration ordehydrogenation can be performed in a short time; thus, treatment can beperformed even at a temperature higher than the strain point of a glasssubstrate.

After moisture or hydrogen in the oxide semiconductor is eliminated inthis manner, oxygen is added. Thus, oxygen defects, for example, in theoxide semiconductor can be reduced, so that the oxide semiconductor canbe i-type (intrinsic) or substantially i-type.

Oxygen can be added in such a manner that, for example, an insulatingfilm including a region where the proportion of oxygen is higher thanthat in the stoichiometric composition ratio is formed in contact withthe oxide semiconductor, and then heat treatment is performed. In such amanner, excess oxygen in the insulating film can be supplied to theoxide semiconductor. Thus, the oxide semiconductor can contain oxygenexcessively. Oxygen contained excessively exists, for example, betweenlattices of a crystal included in the oxide semiconductor.

Note that the insulating film including a region where the proportion ofoxygen is higher than that in the stoichiometric composition may be usedfor either an insulating film positioned on the upper side of the oxidesemiconductor or an insulating film positioned on the lower side of theoxide semiconductor of insulating films in contact with the oxidesemiconductor; it is preferable to use such an insulating film to bothof the insulating films in contact with the oxide semiconductor. Theabove-described effect can be enhanced with a structure in which theinsulating films each including a region where the proportion of oxygenis higher than that in the stoichiometric composition are used as theinsulating films in contact with the oxide semiconductor and positionedon the upper side and lower side of the oxide semiconductor so that theoxide semiconductor is sandwiched between the insulating films.

Here, the insulating film including a region where the proportion ofoxygen is higher than that in the stoichiometric composition may be asingle-layer insulating film or a plurality of insulating films stacked.Note that it is preferable that the insulating film contain impuritiessuch as moisture and hydrogen as little as possible. When hydrogen iscontained in the insulating film, entry of the hydrogen into the oxidesemiconductor or extraction of oxygen from the oxide semiconductor bythe hydrogen occurs, whereby the oxide semiconductor has lowerresistance (n-type conductivity); thus, a parasitic channel might beformed. Therefore, it is important that a film formation method in whichhydrogen is not used be employed in order to form the insulating filmcontaining as little hydrogen as possible. In addition, a materialhaving a high barrier property is preferably used for the insulatingfilm. For example, as the insulating film having a high barrierproperty, a silicon nitride film, a silicon nitride oxide film, analuminum nitride film, an aluminum oxide film, or an aluminum nitrideoxide film can be used. In the case of using a plurality of insulatingfilms stacked, an insulating film having a low proportion of nitrogensuch as a silicon oxide film or a silicon oxynitride film is formed tobe closer to the oxide semiconductor than the insulating film having ahigh barrier property. Then, the insulating film having a high barrierproperty is formed to overlap with the oxide semiconductor with theinsulating film having a low proportion of nitrogen positionedtherebetween. With the use of the insulating film having a high barrierproperty, impurities such as moisture and hydrogen can be prevented fromentering the oxide semiconductor, an interface between the oxidesemiconductor and another insulating film, and the vicinity thereof. Inaddition, the insulating film having a low proportion of nitrogen suchas a silicon oxide film or a silicon oxynitride film is formed incontact with the oxide semiconductor, so that the insulating film formedusing a material having a high barrier property can be prevented frombeing in contact with the oxide semiconductor directly.

Alternatively, the addition of oxygen after moisture or hydrogen in theoxide semiconductor is eliminated may be performed by performing heattreatment on the oxide semiconductor in an oxygen atmosphere. The heattreatment is performed at a temperature, for example, higher than orequal to 100° C. and lower than 350° C., preferably higher than or equalto 150° C. and lower than 250° C. It is preferable that an oxygen gasused for the heat treatment in an oxygen atmosphere do not containwater, hydrogen, and the like. The purity of the oxygen gas which isintroduced into a heat treatment apparatus is preferably higher than orequal to 6N (99.9999%), further preferably higher than or equal to 7N(99.99999%) (that is, the impurity concentration in the oxygen gas ispreferably lower than or equal to 1 ppm, further preferably lower thanor equal to 0.1 ppm).

Alternatively, the addition of oxygen after moisture or hydrogen in theoxide semiconductor is eliminated may be performed by an ionimplantation method, an ion doping method, or the like. For example,oxygen made to be plasma with a microwave of 2.45 GHz may be added tothe oxide semiconductor.

The thus formed oxide semiconductor layer can be used as thesemiconductor layer of a transistor. In this manner, a transistor withextremely small off-state current can be obtained.

Alternatively, the semiconductor layer of the transistor 601 may includemicrocrystalline silicon. Note that microcrystalline silicon is asemiconductor having an intermediate structure between an amorphousstructure and a crystalline structure (including single crystal andpolycrystal). In microcrystalline silicon, columnar or needle-likecrystals having a grain size greater than or equal to 2 nm and less thanor equal to 200 nm, preferably greater than or equal to 10 nm and lessthan or equal to 80 nm, further preferably greater than or equal to 20nm and less than or equal to 50 nm, still further preferably greaterthan or equal to 25 nm and less than or equal to 33 nm, have grown in adirection normal to a substrate surface. Therefore, a grain boundary isformed at an interface between the columnar or needle-like crystals insome cases.

Alternatively, the semiconductor layer of the transistor 601 may includeamorphous silicon. Alternatively, the semiconductor layer of thetransistor 601 may include polycrystalline silicon. Alternatively, thesemiconductor layer of the transistor 601 may include an organicsemiconductor, a carbon nanotube, or the like.

The semiconductor layer of the transistor 601 may have a stackedstructure including a plurality of oxide semiconductors. For example,the semiconductor layer may be a stacked layer of a first oxidesemiconductor layer and a second oxide semiconductor layer which areformed using metal oxides with different compositions. For example, thefirst oxide semiconductor layer may be formed using a three-componentmetal oxide, and the second oxide semiconductor layer may be formedusing a two-component metal oxide. Alternatively, for example, both thefirst oxide semiconductor layer and the second oxide semiconductor layermay be formed using a three-component metal oxide.

Further, the constituent elements of the first oxide semiconductor layerand the second oxide semiconductor layer may be the same as each otherbut the composition of the constituent elements of the first oxidesemiconductor layer and the second oxide semiconductor layer may bedifferent from each other. For example, the first oxide semiconductorlayer may have an atomic ratio of In:Ga:Zn=1:1:1, and the second oxidesemiconductor layer may have an atomic ratio of In:Ga:Zn=3:1:2.Alternatively, the first oxide semiconductor layer may have an atomicratio of In:Ga:Zn=1:3:2, and the second oxide semiconductor layer mayhave an atomic ratio of In:Ga:Zn=2:1:13.

In this case, one of the first oxide semiconductor layer and the secondoxide semiconductor layer which is closer to the gate electrode (on achannel side) preferably contains In and Ga at a proportion satisfyingIn>Ga. The other which is farther from the gate electrode (on a backchannel side) preferably contains In and Ga at a proportion satisfyingIn≦Ga.

In an oxide semiconductor, the s orbital of heavy metal mainlycontributes to carrier transfer, and overlap of the s orbitals is likelyto increase when the In content in the oxide semiconductor is increased.Therefore, an oxide having a composition of In>Ga has higher mobilitythan an oxide having a composition of In≦Ga. Further, in Ga, theformation energy of oxygen vacancies is larger and thus oxygen vacanciesare less likely to occur, than in In; therefore, the oxide having acomposition of In≦Ga has more stable characteristics than the oxidehaving a composition of In>Ga.

An oxide semiconductor containing In and Ga at a proportion satisfyingIn>Ga is used on a channel side, and an oxide semiconductor containingIn and Ga at a proportion satisfying In≦Ga is used on a back channelside, so that mobility and reliability of a transistor can be furtherimproved.

Further, oxide semiconductors having different crystallinities may beused for the first oxide semiconductor layer and the second oxidesemiconductor layer. That is, the semiconductor layer may be formedusing an appropriate combination of a single crystal oxidesemiconductor, a polycrystalline oxide semiconductor, an amorphous oxidesemiconductor, and a CAAC-OS. When an amorphous oxide semiconductor isused for at least one of the first oxide semiconductor layer and thesecond oxide semiconductor layer, internal stress or external stress ofthe semiconductor layer is relieved, variations in characteristics of atransistor is reduced, and reliability of the transistor can be furtherimproved.

On the other hand, an amorphous oxide semiconductor is likely to absorban impurity which serves as a donor, such as hydrogen, and to generatean oxygen vacancy, and thus easily becomes an n-type. Thus, the oxidesemiconductor layer on the channel side is preferably formed using acrystalline oxide semiconductor such as a CAAC-OS.

In the case where a channel-etched bottom-gate transistor is used as thetransistor, when an amorphous oxide semiconductor is used on a backchannel side, oxygen vacancies are generated due to etching treatment atthe time of forming a source electrode and a drain electrode; thus, theoxide semiconductor is likely to be n-type. Therefore, in the case ofusing a channel-etched transistor, an oxide semiconductor havingcrystallinity is preferably used for an oxide semiconductor layer on aback channel side.

Further, the semiconductor layer may have a stacked structure of threeor more semiconductor layers in which an amorphous oxide semiconductorlayer is sandwiched between a plurality of oxide semiconductor layerseach having crystallinity. Furthermore, a structure in which an oxidesemiconductor layer having crystallinity and an amorphous oxidesemiconductor layer are alternately stacked may be employed.

The above structures used when the semiconductor layer has a stackedstructure of a plurality of layers can be employed in combination asappropriate.

This embodiment is obtained by performing change, addition,modification, removal, application, superordinate conceptualization, orsubordinate conceptualization on part or the whole of anotherembodiment. Thus, part of or the whole of this embodiment can be freelycombined with or replaced with part of or the whole of anotherembodiment.

Embodiment 5

In this embodiment, an example of a semiconductor device including adriver circuit will be described.

An example of the structure of the semiconductor device of thisembodiment will be described with reference to FIGS. 40A and 40B.

The semiconductor device illustrated in FIG. 40A includes a drivercircuit (also referred to as Drv) 901, a driver circuit 902, a wiring903, a wiring 904, a wiring 905, and a unit circuit (also referred to asUC) 910. Note that a plurality of unit circuits 910 may be provided. Forexample, a plurality of pixel circuits are provided as the unitcircuits, whereby a display device can be formed.

The driver circuit 901 has a function of controlling the unit circuit910 by inputting a potential or a signal to the unit circuit 910 throughthe wiring 903.

The driver circuit 901 is formed using a shift register, for example.

The driver circuit 902 has a function of controlling the unit circuit910 by inputting a potential or a signal to the unit circuit 910 throughthe wiring 904.

The driver circuit 902 is formed using a shift register, for example.

Note that one of the driver circuits 901 and 902 may be provided overthe same substrate as the unit circuit 910.

The wiring 905 can be a wiring for supplying a potential or a wiring forsupplying a signal, for example. The wiring 905 is connected to thedriver circuit 901 or another circuit. Note that the number of thewirings 905 may be two or more.

As illustrated in FIG. 40B, the wiring 905 may be a plurality of wiringswhich are connected to different elements in the unit circuit 910 andwhich are connected to each other outside a region 900 in which the unitcircuit 910 is provided.

As described with reference to FIGS. 40A and 40B, in an example of thesemiconductor device of this embodiment, a unit circuit and a drivercircuit may be provided over the same substrate.

This embodiment is obtained by performing change, addition,modification, removal, application, superordinate conceptualization, orsubordinate conceptualization on part or the whole of anotherembodiment. Thus, part of or the whole of this embodiment can be freelycombined with or replaced with part of or the whole of anotherembodiment.

Embodiment 6

In this embodiment, a structure of a display panel having any of thepixel configurations described in the above embodiments is describedwith reference to FIGS. 41A and 41B.

Note that FIG. 41A is a top plan view illustrating a display panel 6000,and FIG. 41B is a cross-sectional view of FIG. 41A taken along chainline E1-E2 in FIG. 41A. In FIG. 41A, the display panel 6000 includes asignal line driver circuit 6701, a pixel portion 6702, a first scan linedriver circuit 6703, and a second scan line driver circuit 6706, whichare shown by dotted lines. In addition, a substrate 6710, a sealingsubstrate 6704, and a sealing material 6705 are provided. A portionsurrounded by the sealing material 6705 is a space 6707.

Note that a wiring 6708 formed over the substrate 6710 is a wiring fortransmitting a signal input to the signal line driver circuit 6701, thefirst scan line driver circuit 6703, and the second scan line drivercircuit 6706 and receives a video signal, a clock signal, a startsignal, and the like from a flexible printed circuit (FPC) 6709functioning as an external input terminal. An IC chip (a semiconductorchip including a memory circuit, a buffer circuit, and the like) 6719 ismounted over a connecting portion of the FPC 6709 and the display panelby chip on glass (COG) or the like. Although only the FPC 6709 isillustrated here, a printed wiring board (PWB) may be attached to theFPC 6709. The display device in this specification includes not only amain body of the display panel but one with an FPC or a PWB attachedthereto. In addition, it also includes a display device on which an ICchip or the like is mounted.

Next, the cross-sectional structure is described with reference to FIG.41B. The pixel portion 6702 and peripheral driver circuits (the firstscan line driver circuit 6703, the second scan line driver circuit 6706,and the signal line driver circuit 6701) are formed over a substrate6710. Here, the signal line driver circuit 6701 and the pixel portion6702 are illustrated.

Note that the signal line driver circuit 6701 is formed of transistorshaving the same conductivity type, such as an n-channel transistor 6720and an n-channel transistor 6721. A pixel can be formed usingtransistors having the same conductivity type with the use of any of thepixel configurations in FIG. 25 and FIGS. 33A and 33B. Accordingly, theperipheral driver circuits are formed of n-channel transistors, wherebya display panel of a single conductivity type can be manufactured. It isneedless to say that a CMOS circuit may be formed using a p-channeltransistor as well as an n-channel transistor. Further, in thisembodiment, a display panel in which the peripheral driver circuits areformed over one substrate is shown; however, the present invention isnot limited thereto. All or some of the peripheral driver circuits maybe formed into an IC chip or the like and mounted by COG or the like. Inthis case, the driver circuit does not need to be formed usingtransistors of a single conductivity type, and an n-channel transistorand a p-channel transistor can be used in combination.

Further, the pixel portion 6702 includes a transistor 6711 and atransistor 6712. Note that a source electrode of the transistor 6712 isconnected to a first electrode (pixel electrode) 6713. An insulatinglayer 6714 is formed so as to cover end portions of the first electrode6713. Here, the insulating layer 6714 is formed using a positivephotosensitive acrylic resin film.

In order to obtain favorable coverage, the insulating layer 6714 thatcovers an end portion of the first electrode 6713 is formed to have acurved surface having a curvature at a top end portion or a bottom endportion of the insulating layer 6714. For example, in the case of usinga positive photosensitive acrylic as a material for the insulating layer6714, it is preferable that only the top end portion of the insulatinglayer 6714 have a curved surface having a radius of curvature (0.2 μm to3 μm). Moreover, either a negative photosensitive resin or a positivephotosensitive resin can be used as the insulating layer 6714.

A layer 6716 containing an organic compound and a second electrode(counter electrode) 6717 are formed over the first electrode 6713. Here,it is preferable to use a material having a high work function as amaterial for the first electrode 6713 which functions as an anode. Forexample, a single layer of an indium tin oxide (ITO) film, an indiumzinc oxide film, a titanium nitride film, a chromium film, a tungstenfilm, a Zn film, a Pt film, or the like, a stack of a titanium nitridefilm and a film containing aluminum as a main component, a three-layerstructure of a titanium nitride film, a film containing aluminum as amain component, and a titanium nitride film, or the like can be used.When the layered structure is employed, low wiring resistance, favorableohmic contact, and a function as an anode can be achieved.

The layer 6716 containing an organic compound is formed by anevaporation method using an evaporation mask, or an ink-jet method. Acomplex of a metal belonging to Group 4 of the periodic table of theelements is used for a part of the layer 6716 containing an organiccompound. Besides, a low molecular material or a high molecular materialmay be used in combination as well. Further, as a material for the layer6716 containing an organic compound, a single layer or a stacked layerof an organic compound is often used; however, in this embodiment, aninorganic compound may be used for a part of a film formed using anorganic compound. Moreover, a known triplet material can also be used.

Further, as a material for the second electrode 6717 which functions asa cathode and is formed over the layer 6716 containing an organiccompound, a material having a low work function (Al, Ag, Li, Ca, or analloy thereof such as MgAg, MgIn, AlLi, CaF₂, or Ca₃N₂) may be used. Inthe case where light generated from the layer 6716 containing an organiccompound passes through the second electrode 6717, a stack of a thinmetal film with a small thickness and a transparent conductive film (ofITO (indium tin oxide), indium oxide-zinc oxide (In₂O₃—ZnO), zinc oxide(ZnO), or the like) is preferably used as the second electrode (cathode)6717.

Further, by attaching the sealing substrate 6704 to the substrate 6710with the sealing material 6705, a light-emitting element 6718 isprovided in the space 6707 surrounded by the substrate 6710, the sealingsubstrate 6704, and the sealing material 6705. Note that the space 6707may be filled with an inert gas (e.g., nitrogen, argon, or the like) orfilled with a resin material or the sealant 6705.

Note that an epoxy-based resin is preferably used for the sealingmaterial 6705. It is preferable to use a material that allows as littlemoisture or oxygen as possible to penetrate. As a material for thesealing substrate 6704, a glass substrate, a quartz substrate, a plasticsubstrate formed of fiberglass-reinforced plastics (FRP),polyvinylfluoride (PVF), polyester, acrylic, or the like can be used.

In the above manner, a display panel having any of the pixelconfigurations described in the above embodiments can be obtained.

This embodiment is obtained by performing change, addition,modification, removal, application, superordinate conceptualization, orsubordinate conceptualization on part or the whole of anotherembodiment. Thus, part of or the whole of this embodiment can be freelycombined with or replaced with part of or the whole of anotherembodiment.

Embodiment 7

In this embodiment, an example of a semiconductor device functioning asa display module will be described.

An example of the structure of the semiconductor device of thisembodiment will be described with reference to FIG. 42. FIG. 42illustrates an example of the structure of the semiconductor device ofthis embodiment.

The semiconductor device illustrated in FIG. 42 includes a display panel951, a circuit board 952 connected to the display panel 951 through aterminal 953, and a touch panel 954 overlapping with the display panel951.

In the display panel 951, any of the semiconductor devices in the aboveembodiments of the present invention can be employed.

The circuit board 952 is provided with a circuit having a function ofcontrolling driving of the display panel 951 or the touch panel 954, orthe like.

As the touch panel 954, one or more of a capacitive touch panel, aresistive touch panel, an optical touch panel, and the like can be used.Instead of or in addition to the touch panel 954, for example, a displaymodule may be provided by provision of a housing, a radiator plate, anoptical film, a polarizing plate, a retardation plate, a prism sheet, adiffusion plate, a backlight, and the like.

As illustrated in FIG. 42, the semiconductor device of this embodimentis formed using the semiconductor device described in any of the aboveembodiments and another component such as a touch panel.

Note that the touch panel and the display panel 951 may be formed overthe same substrate. For example, in the case where a counter substrateis provided over a substrate (element substrate) where a transistor anda light-emitting element are formed, an electrode for the touch paneland the like may be formed over a surface of the counter substrate. Thecounter substrate has a function of sealing the light-emitting elementin some cases and may also have a function of a touch panel.Alternatively, the element substrate may have a function of a touchpanel.

Embodiment 8

In this embodiment, examples of electronic appliances are described.

FIGS. 43A to 43H and FIGS. 44A to 44H illustrate electronic appliances.These electronic appliances can include a housing 5000, a displayportion 5001, a speaker 5003, an LED lamp 5004, an operation key 5005(including a power switch or an operation switch), a connection terminal5006, a sensor 5007 (a sensor having a function of measuring force,displacement, position, speed, acceleration, angular velocity,rotational frequency, distance, light, liquid, magnetism, temperature,chemical substance, sound, time, hardness, electric field, current,voltage, electric power, radiation, flow rate, humidity, gradient,oscillation, odor, or infrared ray), a microphone 5008, and the like.

FIG. 43A illustrates a mobile computer which can include a switch 5009,an infrared port 5010, and the like in addition to the above objects.FIG. 43B illustrates a portable image reproducing device (e.g., a DVDreproducing device) provided with a memory medium, which can include asecond display portion 5002, a memory medium reading portion 5011, andthe like in addition to the above objects. FIG. 43C illustrates agoggle-type display which can include the second display portion 5002, asupport 5012, an earphone 5013, and the like in addition to the aboveobjects. FIG. 43D illustrates a portable game machine which can includethe memory medium reading portion 5011 and the like in addition to theabove objects. FIG. 43E illustrates a digital camera with a televisionreception function, which can include an antenna 5014, a shutter button5015, an image receiving portion 5016, and the like in addition to theabove objects. FIG. 43F illustrates a portable game machine which caninclude the second display portion 5002, the memory medium readingportion 5011, and the like in addition to the above objects. FIG. 43Gillustrates a television receiver which can include a tuner, an imageprocessing portion, and the like in addition to the above objects. FIG.43H illustrates a portable television receiver which can include acharger 5017 capable of transmitting and receiving signals and the likein addition to the above objects. FIG. 44A illustrates a display whichcan include a support base 5018 and the like in addition to the aboveobjects. FIG. 44B illustrates a camera which can include an externalconnection port 5019, the shutter button 5015, the image receivingportion 5016, and the like in addition to the above objects. FIG. 44Cillustrates a computer which can include a pointing device 5020, theexternal connection port 5019, a reader/writer 5021, and the like inaddition to the above objects. FIG. 44D illustrates a mobile phone whichcan include a transmitter, a receiver, a tuner of one-segment partialreception service for mobile phones and mobile terminals, and the likein addition to the above objects.

The electronic appliances illustrated in FIGS. 43A to 43H and FIGS. 44Ato 44D can have a variety of functions. For example, a function ofdisplaying a variety of information (a still image, a moving image, atext image, and the like) on a display portion, a touch panel function,a function of displaying a calendar, date, time, and the like, afunction of controlling processing with a variety of software(programs), a wireless communication function, a function of beingconnected to a variety of computer networks with a wirelesscommunication function, a function of transmitting and receiving avariety of data with a wireless communication function, and a functionof reading a program or data stored in a memory medium and displayingthe program or data on a display portion can be given. Further, theelectronic appliance including a plurality of display portions can havea function of displaying image information mainly on one display portionwhile displaying text information mainly on another display portion, afunction of displaying a three-dimensional image by displaying imageswhere parallax is considered on a plurality of display portions, or thelike. Furthermore, the electronic appliance including an image receivingportion can have a function of shooting a still image, a function ofshooting a moving image, a function of automatically or manuallycorrecting a shot image, a function of storing a shot image in a memorymedium (an external memory medium or a memory medium incorporated in thecamera), a function of displaying a shot image on a display portion, orthe like. Note that functions which can be provided for the electronicappliances illustrated in FIGS. 43A to 43H and FIGS. 44A to 44D are notlimited to those described above, and the electronic appliances can havea variety of functions.

The electronic appliances described in this embodiment each include adisplay portion for displaying some sort of information.

Next, application examples of a semiconductor device are described.

FIG. 44E illustrates an example in which a semiconductor device isincorporated in a building structure. FIG. 44E illustrates a housing5022, a display portion 5023, a remote controller 5024 which is anoperation portion, a speaker 5025, and the like. The semiconductordevice is incorporated in the building structure as a wall-hanging typeand can be provided without requiring a large space.

FIG. 44F illustrates another example in which a semiconductor device isincorporated in a building structure. A display panel 5026 isincorporated in a prefabricated bath 5027, so that a person who takes abath can view the display panel 5026.

Note that, although the wall and the prefabricated bath are described asexamples of the building structure in this embodiment, this embodimentis not limited thereto. The semiconductor device can be provided in avariety of building structures.

Next, examples of a semiconductor device incorporated in a moving objectare described.

FIG. 44G illustrates an example in which a semiconductor device isprovided in a car. A display panel 5028 is attached to a body 5029 ofthe car and can display information on the operation of the car orinformation input from the inside or outside of the car on demand. Notethat a navigation function may be provided.

FIG. 44H illustrates an example in which a semiconductor device isincorporated in a passenger airplane. FIG. 44H illustrates a usagepattern in the case where a display panel 5031 is provided for a ceiling5030 above a seat of the passenger airplane. The display panel 5031 isattached to the ceiling 5030 with a hinge portion 5032, and a passengercan view the display panel 5031 by stretching of the hinge portion 5032.The display panel 5031 has a function of displaying information whenoperated by the passenger.

Note that, although the body of the car and the body of the airplane aredescribed as examples of the moving object in this embodiment, thisembodiment is not limited thereto. The semiconductor device can beprovided for a variety of moving objects such as a two-wheel motorvehicle, a four-wheel vehicle (including a car, a bus, and the like), atrain (including a monorail, a railway, and the like), and a ship.

Note that, in this specification and the like, part of a diagram or atext described in one embodiment can be taken out to constitute oneembodiment of the invention. Thus, in the case where a diagram or a textrelated to a certain part is described, a content taken out from adiagram or a text of the certain part is also disclosed as oneembodiment of the invention and can constitute one embodiment of theinvention. Therefore, for example, part of a diagram or a text includingone or more of active elements (e.g., transistors or diodes), wirings,passive elements (e.g., capacitors or resistors), conductive layers,insulating layers, semiconductor layers, organic materials, inorganicmaterials, components, devices, operating methods, manufacturingmethods, or the like can be taken out to constitute one embodiment ofthe invention. For example, M circuit elements (e.g., transistors orcapacitors) (M is an integer) are picked up from a circuit diagram inwhich N circuit elements (e.g., transistors or capacitors) (N is aninteger, where M<N) are provided, whereby one embodiment of theinvention can be constituted. As another example, M layers (M is aninteger) are picked up from a cross-sectional view in which N layers (Nis an integer, where M<N) are provided, whereby one embodiment of theinvention can be constituted. As another example, M elements (M is aninteger) are picked up from a flow chart in which N elements (N is aninteger, where M<N) are provided, whereby one embodiment of theinvention can be constituted.

Note that, in the case where at least one specific example is describedin a diagram or a text described in one embodiment in this specificationand the like, it will be readily appreciated by those skilled in the artthat a broader concept of the specific example can be derived.Therefore, in the diagram or the text described in one embodiment, inthe case where at least one specific example is described, a broaderconcept of the specific example is disclosed as one embodiment of theinvention and can constitute one embodiment of the invention.

Note that, in this specification and the like, a content described in atleast a diagram (which may be part of the diagram) is disclosed as oneembodiment of the invention and can constitute one embodiment of theinvention. Therefore, when a certain content is described in a diagram,the content is disclosed as one embodiment of the invention even withouttext description and can constitute one embodiment of the invention.Similarly, a diagram obtained by taking out part of a diagram isdisclosed as one embodiment of the invention and can constitute oneembodiment of the invention.

This application is based on Japanese Patent Application serial no.2012-126402 filed with Japan Patent Office on Jun. 1, 2012, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: a transistor;a load; a first capacitor; a second capacitor; a first switch; a secondswitch; a third switch; a fourth switch; and a fifth switch, wherein oneof a source and a drain of the transistor is electrically connected tothe load, wherein the other of the source and the drain of thetransistor is electrically connected to a first wiring, wherein a gateof the transistor is electrically connected to a second wiring throughthe first switch, wherein the gate of the transistor is electricallyconnected to a first electrode of the first capacitor, wherein a secondelectrode of the first capacitor is electrically connected to a thirdwiring through the second switch, wherein the second electrode of thefirst capacitor is electrically connected to a first electrode of thesecond capacitor through the third switch, wherein the first electrodeof the second capacitor is electrically connected to the gate of thetransistor through the fourth switch, wherein a second electrode of thesecond capacitor is electrically connected to the load, and wherein thesecond electrode of the second capacitor is electrically connected to afourth wiring through the fifth switch.
 2. The semiconductor deviceaccording to claim 1, further comprising a sixth switch, wherein thegate of the transistor is electrically connected to the other of thesource and the drain of the transistor through the sixth switch.
 3. Thesemiconductor device according to claim 1, further comprising a sixthswitch, wherein the gate of the transistor is electrically connected toa fifth wiring through the sixth switch.
 4. The semiconductor deviceaccording to claim 1, further comprising a sixth switch and a seventhswitch, wherein the gate of the transistor is electrically connected tothe other of the source and the drain of the transistor through thesixth switch, and wherein the other of the source and the drain of thetransistor is electrically connected to the first wiring through theseventh switch.
 5. The semiconductor device according to claim 1,further comprising a sixth switch and a seventh switch, wherein the gateof the transistor is electrically connected to the other of the sourceand the drain of the transistor through the sixth switch, and whereinthe one of the source and the drain of the transistor is electricallyconnected to the load through the seventh switch.
 6. The semiconductordevice according to claim 1, further comprising a sixth switch, whereinthe one of the source and the drain of the transistor is electricallyconnected to the load through the sixth switch.
 7. The semiconductordevice according to claim 1, wherein the transistor is a depletiontransistor.
 8. The semiconductor device according to claim 1, whereinthe first switch is a first transistor, wherein the second switch is asecond transistor, wherein the third switch is a third transistor,wherein the fourth switch is a fourth transistor, and wherein the fifthswitch is a fifth transistor.
 9. The semiconductor device according toclaim 8, wherein the first transistor, the second transistor, the thirdtransistor, the fourth transistor, and the fifth transistor have thesame conductivity type.
 10. A display panel comprising the semiconductordevice according to claim 1, wherein the load is a display element. 11.An electronic appliance comprising the semiconductor device according toclaim 1 and an operation switch.
 12. A semiconductor device comprising:a first capacitor; a second capacitor; a first transistor; a secondtransistor; a third transistor; a fourth transistor; a fifth transistor;and a sixth transistor, wherein one of a source and a drain of the firsttransistor is electrically connected to a pixel electrode, wherein theother of the source and the drain of the first transistor iselectrically connected to a first wiring, wherein one of a source and adrain of the second transistor is electrically connected to a gate ofthe first transistor, wherein the other of the source and the drain ofthe second transistor is electrically connected to a second wiring,wherein a first electrode of the first capacitor is electricallyconnected to the gate of the first transistor, wherein a secondelectrode of the first capacitor is electrically connected to one of asource and a drain of the third transistor, wherein the other of thesource and the drain of the third transistor is electrically connectedto a third wiring, wherein one of a source and a drain of the fourthtransistor is electrically connected to the second electrode of thefirst capacitor, wherein the other of the source and the drain of thefourth transistor is electrically connected to a first electrode of thesecond capacitor, wherein a second electrode of the second capacitor iselectrically connected to the pixel electrode, wherein one of a sourceand a drain of the fifth transistor is electrically connected to thefirst electrode of the second capacitor, wherein the other of the sourceand the drain of the fifth transistor is electrically connected to thegate of the first transistor, wherein one of a source and a drain of thesixth transistor is electrically connected to the second electrode ofthe second capacitor, and wherein the other of the source and the drainof the sixth transistor is electrically connected to a fourth wiring.13. The semiconductor device according to claim 12, further comprising aseventh transistor, wherein one of a source and a drain of the seventhtransistor is electrically connected to the gate of the firsttransistor, and wherein the other of the source and the drain of theseventh transistor is electrically connected to the other of the sourceand the drain of the first transistor.
 14. The semiconductor deviceaccording to claim 12, further comprising a seventh transistor, whereinone of a source and a drain of the seventh transistor is electricallyconnected to the gate of the first transistor, and wherein the other ofthe source and the drain of the seventh transistor is electricallyconnected to a fifth wiring.
 15. The semiconductor device according toclaim 12, further comprising a seventh transistor and an eighthtransistor, wherein one of a source and a drain of the seventhtransistor is electrically connected to the gate of the firsttransistor, wherein the other of the source and the drain of the seventhtransistor is electrically connected to the other of the source and thedrain of the first transistor, wherein one of a source and a drain ofthe eighth transistor is electrically connected to the other of thesource and the drain of the first transistor, and wherein the other ofthe source and the drain of the eighth transistor is electricallyconnected to the first wiring.
 16. The semiconductor device according toclaim 12, further comprising a seventh transistor and an eighthtransistor, wherein one of a source and a drain of the seventhtransistor is electrically connected to the gate of the firsttransistor, wherein the other of the source and the drain of the seventhtransistor is electrically connected to the other of the source and thedrain of the first transistor, wherein one of a source and a drain ofthe eighth transistor is electrically connected to the one of the sourceand the drain of the first transistor, and wherein the other of thesource and the drain of the eighth transistor is electrically connectedto the pixel electrode.
 17. The semiconductor device according to claim12, further comprising a seventh transistor, wherein one of a source anda drain of the seventh transistor is electrically connected to the oneof the source and the drain of the first transistor, and wherein theother of the source and the drain of the seventh transistor iselectrically connected to the pixel electrode.
 18. The semiconductordevice according to claim 12, wherein the first transistor is adepletion transistor.
 19. The semiconductor device according to claim12, wherein the first transistor, the second transistor, the thirdtransistor, the fourth transistor, the fifth transistor and the sixthtransistor have the same conductivity type.
 20. A display panelcomprising the semiconductor device according to claim 12, wherein adisplay element comprises the pixel electrode.
 21. An electronicappliance comprising the semiconductor device according to claim 12 andan operation switch.
 22. A method for driving a semiconductor devicecomprising a transistor, a load, a first capacitor, a second capacitor,a first switch, a second switch, a third switch, a fourth switch, and afifth switch, wherein one of a source and a drain of the transistor iselectrically connected to the load, wherein the other of the source andthe drain of the transistor is electrically connected to a first wiring,wherein a gate of the transistor is electrically connected to a secondwiring through the first switch, wherein the gate of the transistor iselectrically connected to a first electrode of the first capacitor,wherein a second electrode of the first capacitor is electricallyconnected to a third wiring through the second switch, wherein thesecond electrode of the first capacitor is electrically connected to afirst electrode of the second capacitor through the third switch,wherein the first electrode of the second capacitor is electricallyconnected to the gate of the transistor through the fourth switch,wherein a second electrode of the second capacitor is electricallyconnected to the load, and wherein the second electrode of the secondcapacitor is electrically connected to a fourth wiring through the fifthswitch, the method comprising the steps of: applying a first voltagebetween the first electrode and the second electrode of the firstcapacitor and a second voltage between the first electrode and thesecond electrode of the second capacitor while the first switch, thesecond switch, the fourth switch and the fifth switch are in on-stateand the third switch is in off-state; discharging electric chargeaccumulated in the second capacitor until a potential difference betweenthe first electrode and the second electrode of the second capacitorbecomes a third voltage while the first switch, the second switch andthe fourth switch are in on-state and the third switch and the fifthswitch are in off-state; applying a total voltage of the first voltageand the third voltage between the gate and the one of the source and thedrain of the transistor while the first switch, the second switch andthe fourth switch are in off-state and the third switch and the fifthswitch are in on-state; and supplying a current corresponding to thetotal voltage to the load while the first switch, the second switch, thefourth switch and the fifth switch are in off-state and the third switchis in on-state.
 23. The method for driving a semiconductor deviceaccording to claim 22, wherein the third voltage is substantially equalto the threshold voltage of the transistor.
 24. The method for driving asemiconductor device according to claim 22, wherein an amount of thecurrent supplied to the load depends on a video signal supplied to thesecond wiring.